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Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap

Author

Listed:
  • Sen Gao

    (Northeastern University)

  • Sanghyun Hong

    (Northeastern University)

  • Soohyung Park

    (Korea Institute of Science and Technology)

  • Hyun Young Jung

    (Gyeongsang National University)

  • Wentao Liang

    (Northeastern University)

  • Yonghee Lee

    (Korea Advanced Institute of Science and Technology)

  • Chi Won Ahn

    (Korea Advanced Institute of Science and Technology)

  • Ji Young Byun

    (Korea Institute of Science and Technology)

  • Juyeon Seo

    (Northeastern University)

  • Myung Gwan Hahm

    (Inha University)

  • Hyehee Kim

    (Northeastern University)

  • Kiwoong Kim

    (Yonsei University)

  • Yeonjin Yi

    (Yonsei University)

  • Hailong Wang

    (University of Science and Technology of China)

  • Moneesh Upmanyu

    (Northeastern University)

  • Sung-Goo Lee

    (Korea Research Institute of Chemical Technology)

  • Yoshikazu Homma

    (Tokyo University of Science)

  • Humberto Terrones

    (Applied Physics and Astronomy, Rensselaer Polytechnic Institute)

  • Yung Joon Jung

    (Northeastern University
    Northeastern University)

Abstract

The need for miniaturized and high-performance devices has attracted enormous attention to the development of quantum silicon nanowires. However, the preparation of abundant quantities of silicon nanowires with the effective quantum-confined dimension remains challenging. Here, we prepare highly dense and vertically aligned sub-5 nm silicon nanowires with length/diameter aspect ratios greater than 10,000 by developing a catalyst-free chemical vapor etching process. We observe an unusual lattice reduction of up to 20% within ultra-narrow silicon nanowires and good oxidation stability in air compared to conventional silicon. Moreover, the material exhibits a direct optical bandgap of 4.16 eV and quasi-particle bandgap of 4.75 eV with the large exciton binding energy of 0.59 eV, indicating the significant phonon and electronic confinement. The results may provide an opportunity to investigate the chemistry and physics of highly confined silicon quantum nanostructures and may explore their potential uses in nanoelectronics, optoelectronics, and energy systems.

Suggested Citation

  • Sen Gao & Sanghyun Hong & Soohyung Park & Hyun Young Jung & Wentao Liang & Yonghee Lee & Chi Won Ahn & Ji Young Byun & Juyeon Seo & Myung Gwan Hahm & Hyehee Kim & Kiwoong Kim & Yeonjin Yi & Hailong Wa, 2022. "Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-31174-x
    DOI: 10.1038/s41467-022-31174-x
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    References listed on IDEAS

    as
    1. Bozhi Tian & Xiaolin Zheng & Thomas J. Kempa & Ying Fang & Nanfang Yu & Guihua Yu & Jinlin Huang & Charles M. Lieber, 2007. "Coaxial silicon nanowires as solar cells and nanoelectronic power sources," Nature, Nature, vol. 449(7164), pages 885-889, October.
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