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Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit

Author

Listed:
  • Junho Bae

    (Kyung Hee University)

  • Yuseop Shin

    (Kyung Hee University)

  • Hyungyu Yoo

    (Kyung Hee University
    Kyung Hee University)

  • Yongsu Choi

    (Kyung Hee University
    Kyung Hee University)

  • Jinho Lim

    (Kyung Hee University
    Kyung Hee University)

  • Dasom Jeon

    (Kyung Hee University
    Kyung Hee University)

  • Ilsoo Kim

    (LG Display Research and Development Center)

  • Myungsoo Han

    (LG Display Research and Development Center)

  • Seunghyun Lee

    (Kyung Hee University
    Kyung Hee University)

Abstract

Near-eye display technology is a rapidly growing field owing to the recent emergence of augmented and mixed reality. Ultrafast response time, high resolution, high luminance, and a dynamic range for outdoor use are all important for non-pixelated, pupil-forming optics. The current mainstream technologies using liquid crystals and organic materials cannot satisfy all these conditions. Thus, finely patterned light-emissive solid-state devices with integrated circuits are often proposed to meet these requirements. In this study, we integrated several advanced technologies to design a prototype microscale light-emitting diode (LED) arrays using quantum dot (QD)-based color conversion. Wafer-scale epilayer transfer and the bond-before-pattern technique were used to directly integrate 5-µm-scale GaN LED arrays on a foreign silicon substrate. Notably, the lithography-level alignment with the bottom wafer opens up the possibility for ultrafast operation with circuit integration. Spectrally pure color conversion and solvent-free QD patterning were also achieved using an elastomeric topographical mask. Self-assembled monolayers were applied to selectively alter the surface wettability for a completely dry process. The final emissive-type LED array integrating QD, GaN, and silicon technology resulted in a 1270 PPI resolution that is far beyond the retinal limit.

Suggested Citation

  • Junho Bae & Yuseop Shin & Hyungyu Yoo & Yongsu Choi & Jinho Lim & Dasom Jeon & Ilsoo Kim & Myungsoo Han & Seunghyun Lee, 2022. "Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-29538-4
    DOI: 10.1038/s41467-022-29538-4
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    References listed on IDEAS

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    1. Yu-Ho Won & Oul Cho & Taehyung Kim & Dae-Young Chung & Taehee Kim & Heejae Chung & Hyosook Jang & Junho Lee & Dongho Kim & Eunjoo Jang, 2019. "Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes," Nature, Nature, vol. 575(7784), pages 634-638, November.
    2. Jeehye Yang & Donghyo Hahm & Kyunghwan Kim & Seunghyun Rhee & Myeongjae Lee & Seunghan Kim & Jun Hyuk Chang & Hye Won Park & Jaehoon Lim & Minkyoung Lee & Hyeokjun Kim & Joohee Bang & Hyungju Ahn & Je, 2020. "High-resolution patterning of colloidal quantum dots via non-destructive, light-driven ligand crosslinking," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
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    1. Jiawei Lv & Jeong Hyun Han & Geonho Han & Seongmin An & Seung Ju Kim & Ryeong Myeong Kim & Jung‐El Ryu & Rena Oh & Hyuckjin Choi & In Han Ha & Yoon Ho Lee & Minje Kim & Gyeong-Su Park & Ho Won Jang & , 2024. "Spatiotemporally modulated full-polarized light emission for multiplexed optical encryption," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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