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Doping-free complementary WSe2 circuit via van der Waals metal integration

Author

Listed:
  • Lingan Kong

    (Hunan University)

  • Xiaodong Zhang

    (Northwestern Polytechnical University)

  • Quanyang Tao

    (Hunan University)

  • Mingliang Zhang

    (Hunan University)

  • Weiqi Dang

    (Hunan University)

  • Zhiwei Li

    (Hunan University)

  • Liping Feng

    (Northwestern Polytechnical University)

  • Lei Liao

    (Hunan University)

  • Xiangfeng Duan

    (University of California)

  • Yuan Liu

    (Hunan University)

Abstract

Two-dimensional (2D) semiconductors have attracted considerable attention for the development of ultra-thin body transistors. However, the polarity control of 2D transistors and the achievement of complementary logic functions remain critical challenges. Here, we report a doping-free strategy to modulate the polarity of WSe2 transistors using same contact metal but different integration methods. By applying low-energy van der Waals integration of Au electrodes, we observed robust and optimized p-type transistor behavior, which is in great contrast to the transistors fabricated on the same WSe2 flake using conventional deposited Au contacts with pronounced n-type characteristics. With the ability to switch majority carrier type and to achieve optimized contact for both electrons and holes, a doping-free logic inverter is demonstrated with higher voltage gain of 340, at the bias voltage of 5.5 V. Furthermore, the simple polarity control strategy is extended for realizing more complex logic functions such as NAND and NOR.

Suggested Citation

  • Lingan Kong & Xiaodong Zhang & Quanyang Tao & Mingliang Zhang & Weiqi Dang & Zhiwei Li & Liping Feng & Lei Liao & Xiangfeng Duan & Yuan Liu, 2020. "Doping-free complementary WSe2 circuit via van der Waals metal integration," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-15776-x
    DOI: 10.1038/s41467-020-15776-x
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    Cited by:

    1. Yaoqiang Zhou & Lei Tong & Zefeng Chen & Li Tao & Yue Pang & Jian-Bin Xu, 2023. "Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Yu Pan & Tao Jian & Pingfan Gu & Yiwen Song & Qi Wang & Bo Han & Yuqia Ran & Zemin Pan & Yanping Li & Wanjin Xu & Peng Gao & Chendong Zhang & Jun He & Xiaolong Xu & Yu Ye, 2024. "Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Lingan Kong & Ruixia Wu & Yang Chen & Ying Huangfu & Liting Liu & Wei Li & Donglin Lu & Quanyang Tao & Wenjing Song & Wanying Li & Zheyi Lu & Xiao Liu & Yunxin Li & Zhiwei Li & Wei Tong & Shuimei Ding, 2023. "Wafer-scale and universal van der Waals metal semiconductor contact," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    4. Xiaodong Zhang & Chenxi Huang & Zeyu Li & Jun Fu & Jiaran Tian & Zhuping Ouyang & Yuliang Yang & Xiang Shao & Yulei Han & Zhenhua Qiao & Hualing Zeng, 2024. "Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    5. Mingxiu Liu & Jingxuan Wei & Liujian Qi & Junru An & Xingsi Liu & Yahui Li & Zhiming Shi & Dabing Li & Kostya S. Novoselov & Cheng-Wei Qiu & Shaojuan Li, 2024. "Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe2/Ta2NiSe5 photodetectors," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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