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Analysis of Losses Associated with Series Resistance (Rs) in Simple-Structured c-Si Solar Cells

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  • Manuel J. Heredia-Rios

    (Dpto. de Electrónica, Instituto Nacional de Astrofísica Óptica y Electrónica, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, San Andrés Cholula C.P. 72840, Mexico)

  • Luis Hernandez-Martinez

    (Dpto. de Electrónica, Instituto Nacional de Astrofísica Óptica y Electrónica, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, San Andrés Cholula C.P. 72840, Mexico)

  • Monico Linares-Aranda

    (Dpto. de Electrónica, Instituto Nacional de Astrofísica Óptica y Electrónica, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, San Andrés Cholula C.P. 72840, Mexico)

  • Mario Moreno-Moreno

    (Dpto. de Electrónica, Instituto Nacional de Astrofísica Óptica y Electrónica, Luis Enrique Erro No. 1, Sta. Ma. Tonantzintla, San Andrés Cholula C.P. 72840, Mexico)

  • Javier Flores Méndez

    (Tecnológico Nacional de México/I.T. Puebla, Av. Tecnológico No. 420, Maravillas, Puebla C.P. 72220, Mexico
    Área de Ingeniería, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla C.P. 72570, Mexico)

Abstract

The assessment of photovoltaic devices, which convert light energy into electricity, has become significantly more relevant due to the aspiration to reduce pollution on a global scale. In this context, the pursuit of optimizing the efficiency of converting light energy into electrical energy involves exhaustive studies and structural analyses of solar cells, all directed toward achieving this goal. This study introduces a research proposal aimed at analyzing the losses associated with series resistance (Rs). The analysis takes into account each component comprising this resistance, proposing a network of resistances that precisely models each of these elements. The aforementioned research focused on simple-structured crystalline silicon cells. During this investigation, the junction depth ( xj ) of the n-p materials was varied, with the aim of achieving efficiencies in the range of 12%. However, in the pursuit of this desired efficiency, a significant impact on series resistance was observed when analyzing the I-V curves of the cells obtained in each manufacturing process.

Suggested Citation

  • Manuel J. Heredia-Rios & Luis Hernandez-Martinez & Monico Linares-Aranda & Mario Moreno-Moreno & Javier Flores Méndez, 2024. "Analysis of Losses Associated with Series Resistance (Rs) in Simple-Structured c-Si Solar Cells," Energies, MDPI, vol. 17(7), pages 1-13, March.
    • Handle: RePEc:gam:jeners:v:17:y:2024:i:7:p:1520-:d:1362027
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    References listed on IDEAS

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    1. van Dyk, E.E. & Meyer, E.L., 2004. "Analysis of the effect of parasitic resistances on the performance of photovoltaic modules," Renewable Energy, Elsevier, vol. 29(3), pages 333-344.
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