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Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion

Author

Listed:
  • Héctor Sarnago

    (Department of Electronic Engineering and Communications, University of Zaragoza, I3A., 50018 Zaragoza, Spain)

  • Óscar Lucía

    (Department of Electronic Engineering and Communications, University of Zaragoza, I3A., 50018 Zaragoza, Spain)

  • Iulian O. Popa

    (Department of Electronic Engineering and Communications, University of Zaragoza, I3A., 50018 Zaragoza, Spain)

  • José M. Burdío

    (Department of Electronic Engineering and Communications, University of Zaragoza, I3A., 50018 Zaragoza, Spain)

Abstract

New semiconductor technology is enabling the design of more reliable and high-performance power converters. In particular, wide bandgap (WBG) silicon carbide (SiC) and gallium nitride (GaN) technologies provide faster switching times, higher operating temperature, and higher blocking voltage. Recently, high-voltage GaN devices have opened the design window to new applications with high performance and cost-effective implementation. However, one of the main drawbacks is that these devices require accurate base current control to ensure safe and efficient operation. As a consequence, the base drive circuit becomes more complex and the final efficiency is decreased. This paper presents an improved gate driver circuit for GaN devices based on the use of a constant current regulator (CCR). The proposed circuit achieves constant current regardless of the operating conditions, solving variations with temperature, aging and operating conditions that may degrade the converter performance. Besides, the proposed circuit is reliable and cost-effective, being applicable to a wide range of commercial, industrial and automotive applications. In this paper, its application to a zero-voltage switching resonant inverter for domestic induction heating was performed to prove the feasibility of this concept.

Suggested Citation

  • Héctor Sarnago & Óscar Lucía & Iulian O. Popa & José M. Burdío, 2021. "Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion," Energies, MDPI, vol. 14(9), pages 1-10, April.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:9:p:2377-:d:541410
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    References listed on IDEAS

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    1. Milad Moradpour & Paolo Pirino & Michele Losito & Wulf-Toke Franke & Amit Kumar & Gianluca Gatto, 2020. "Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles," Energies, MDPI, vol. 13(14), pages 1-14, July.
    2. Shan Yin & Yingzhe Wu & Yitao Liu & Xuewei Pan, 2019. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT," Energies, MDPI, vol. 12(23), pages 1-15, November.
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    Cited by:

    1. Rajanand Patnaik Narasipuram & Subbarao Mopidevi, 2023. "A Novel Hybrid Control Strategy and Dynamic Performance Enhancement of a 3.3 kW GaN–HEMT-Based iL 2 C Resonant Full-Bridge DC–DC Power Converter Methodology for Electric Vehicle Charging Systems," Energies, MDPI, vol. 16(15), pages 1-22, August.
    2. Pradeep Vishnuram & Gunabalan Ramachandiran & Thanikanti Sudhakar Babu & Benedetto Nastasi, 2021. "Induction Heating in Domestic Cooking and Industrial Melting Applications: A Systematic Review on Modelling, Converter Topologies and Control Schemes," Energies, MDPI, vol. 14(20), pages 1-34, October.
    3. Pradeep Vishnuram & Suchitra Dayalan & Sudhakar Babu Thanikanti & Karthik Balasubramanian & Benedetto Nastasi, 2021. "Single Source Multi-Frequency AC-AC Converter for Induction Cooking Applications," Energies, MDPI, vol. 14(16), pages 1-21, August.

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