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Amorphous Silicon Thin Film Deposition for Poly-Si/SiO 2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

Author

Listed:
  • Changhyun Lee

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Jiyeon Hyun

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Jiyeon Nam

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Seok-Hyun Jeong

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Hoyoung Song

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Soohyun Bae

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • Hyunju Lee

    (Meiji Renewable Energy Laboratory, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan)

  • Jaeseung Seol

    (Hanwha Q CELLS GmbH, Sonnenallee 17-21, Bitterfeld-Wolfen OT Thalheim, 06766 Bitterfeld-Wolfen, Germany)

  • Donghwan Kim

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Yoonmook Kang

    (KU-KIST Graduate School of Energy and Environment, Green School, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Hae-Seok Lee

    (KU-KIST Graduate School of Energy and Environment, Green School, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

Abstract

Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.

Suggested Citation

  • Changhyun Lee & Jiyeon Hyun & Jiyeon Nam & Seok-Hyun Jeong & Hoyoung Song & Soohyun Bae & Hyunju Lee & Jaeseung Seol & Donghwan Kim & Yoonmook Kang & Hae-Seok Lee, 2021. "Amorphous Silicon Thin Film Deposition for Poly-Si/SiO 2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region," Energies, MDPI, vol. 14(24), pages 1-9, December.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:24:p:8199-:d:696523
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    References listed on IDEAS

    as
    1. Ji Yeon Hyun & Soohyun Bae & Yoon Chung Nam & Dongkyun Kang & Sang-Won Lee & Donghwan Kim & Jooyoung Park & Yoonmook Kang & Hae-Seok Lee, 2019. "Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells," Sustainability, MDPI, vol. 11(14), pages 1-7, July.
    2. Hoyoung Song & Changhyun Lee & Jiyeon Hyun & Sang-Won Lee & Dongjin Choi & Dowon Pyun & Jiyeon Nam & Seok-Hyun Jeong & Jiryang Kim & Soohyun Bae & Hyunju Lee & Yoonmook Kang & Donghwan Kim & Hae-Seok , 2021. "Monolithic Perovskite-Carrier Selective Contact Silicon Tandem Solar Cells Using Molybdenum Oxide as a Hole Selective Layer," Energies, MDPI, vol. 14(11), pages 1-9, May.
    3. Armin Richter & Ralph Müller & Jan Benick & Frank Feldmann & Bernd Steinhauser & Christian Reichel & Andreas Fell & Martin Bivour & Martin Hermle & Stefan W. Glunz, 2021. "Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses," Nature Energy, Nature, vol. 6(4), pages 429-438, April.
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