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Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

Author

Listed:
  • Ji Yeon Hyun

    (Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Soohyun Bae

    (Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Yoon Chung Nam

    (Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Dongkyun Kang

    (Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Sang-Won Lee

    (Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Donghwan Kim

    (Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
    KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Jooyoung Park

    (KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Yoonmook Kang

    (KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

  • Hae-Seok Lee

    (KU-KIST GREEN School (Graduate School of Energy and Environment), Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea)

Abstract

Al 2 O 3 /SiN x stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiN x film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al 2 O 3 /SiN x stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al 2 O 3 structure using electron energy-loss spectroscopy.

Suggested Citation

  • Ji Yeon Hyun & Soohyun Bae & Yoon Chung Nam & Dongkyun Kang & Sang-Won Lee & Donghwan Kim & Jooyoung Park & Yoonmook Kang & Hae-Seok Lee, 2019. "Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells," Sustainability, MDPI, vol. 11(14), pages 1-7, July.
    • Handle: RePEc:gam:jsusta:v:11:y:2019:i:14:p:3784-:d:247258
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    Cited by:

    1. Changhyun Lee & Jiyeon Hyun & Jiyeon Nam & Seok-Hyun Jeong & Hoyoung Song & Soohyun Bae & Hyunju Lee & Jaeseung Seol & Donghwan Kim & Yoonmook Kang & Hae-Seok Lee, 2021. "Amorphous Silicon Thin Film Deposition for Poly-Si/SiO 2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region," Energies, MDPI, vol. 14(24), pages 1-9, December.

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