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Transport Properties and High Temperature Raman Features of Heavily Gd-Doped Ceria

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  • Cristina Artini

    (Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova, Italy
    Institute of Condensed Matter Chemistry and Technologies for Energy, National Research Council, CNR-ICMATE, Via De Marini 6, 16149 Genova, Italy)

  • Sabrina Presto

    (Institute of Condensed Matter Chemistry and Technologies for Energy, National Research Council, CNR-ICMATE, c/o DICCA-UNIGE, Via all’Opera Pia 15, 16145 Genova, Italy)

  • Sara Massardo

    (Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova, Italy)

  • Marcella Pani

    (Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova, Italy
    CNR-SPIN, Corso Perrone 24, 16152 Genova, Italy)

  • Maria Maddalena Carnasciali

    (Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova, Italy
    INSTM, Genova Research Unit, Via Dodecaneso 31, 16146 Genova, Italy)

  • Massimo Viviani

    (Institute of Condensed Matter Chemistry and Technologies for Energy, National Research Council, CNR-ICMATE, c/o DICCA-UNIGE, Via all’Opera Pia 15, 16145 Genova, Italy)

Abstract

Transport and structural properties of heavily doped ceria can reveal subtle details of the interplay between conductivity and defects aggregation in this material, widely studied as solid electrolyte in solid oxide fuel cells. The ionic conductivity of heavily Gd-doped ceria samples (Ce 1− x Gd x O 2− x /2 with x ranging between 0.31 and 0.49) was investigated by impedance spectroscopy in the 600–1000 K temperature range. A slope change was found in the Arrhenius plot at ~723 K for samples with x = 0.31 and 0.34, namely close to the compositional boundary of the CeO 2 -based solid solution. The described discontinuity, giving rise to two different activation energies, points at the existence of a threshold temperature, below which oxygen vacancies are blocked, and above which they become free to move through the lattice. This conclusion is well supported by Raman spectroscopy, due to the discontinuity revealed in the Raman shift trend versus temperature of the signal related to defects aggregates which hinder the vacancies movement. This evidence, observable in samples with x = 0.31 and 0.34 above ~750 K, accounts for a weakening of Gd–O bonds within blocking microdomains, which is compatible with the existence of a lower activation energy above the threshold temperature.

Suggested Citation

  • Cristina Artini & Sabrina Presto & Sara Massardo & Marcella Pani & Maria Maddalena Carnasciali & Massimo Viviani, 2019. "Transport Properties and High Temperature Raman Features of Heavily Gd-Doped Ceria," Energies, MDPI, vol. 12(21), pages 1-11, October.
    • Handle: RePEc:gam:jeners:v:12:y:2019:i:21:p:4148-:d:281845
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    References listed on IDEAS

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    1. Paul J. Smith & Louise Smith & Nicholas F. Dummer & Mark Douthwaite & David J. Willock & Mark Howard & David W. Knight & Stuart H. Taylor & Graham J. Hutchings, 2019. "Investigating the Influence of Reaction Conditions and the Properties of Ceria for the Valorisation of Glycerol," Energies, MDPI, vol. 12(7), pages 1-14, April.
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    Cited by:

    1. Cristina Artini & Sara Massardo & Maria Maddalena Carnasciali & Boby Joseph & Marcella Pani, 2020. "In Situ High Pressure Structural Investigation of Sm-Doped Ceria," Energies, MDPI, vol. 13(7), pages 1-14, March.

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