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Organic bipolar transistors

Author

Listed:
  • Shu-Jen Wang

    (Technische Universität Dresden)

  • Michael Sawatzki

    (Technische Universität Dresden)

  • Ghader Darbandy

    (University of Applied Science)

  • Felix Talnack

    (Technische Universität Dresden)

  • Jörn Vahland

    (Technische Universität Dresden)

  • Marc Malfois

    (ALBA Synchrotron)

  • Alexander Kloes

    (University of Applied Science)

  • Stefan Mannsfeld

    (Technische Universität Dresden)

  • Hans Kleemann

    (Technische Universität Dresden)

  • Karl Leo

    (Technische Universität Dresden
    Technische Universität Dresden)

Abstract

Devices made using thin-film semiconductors have attracted much interest recently owing to new application possibilities. Among materials systems suitable for thin-film electronics, organic semiconductors are of particular interest; their low cost, biocompatible carbon-based materials and deposition by simple techniques such as evaporation or printing enable organic semiconductor devices to be used for ubiquitous electronics, such as those used on or in the human body or on clothing and packages1–3. The potential of organic electronics can be leveraged only if the performance of organic transistors is improved markedly. Here we present organic bipolar transistors with outstanding device performance: a previously undescribed vertical architecture and highly crystalline organic rubrene thin films yield devices with high differential amplification (more than 100) and superior high-frequency performance over conventional devices. These bipolar transistors also give insight into the minority carrier diffusion length—a key parameter in organic semiconductors. Our results open the door to new device concepts of high-performance organic electronics with ever faster switching speeds.

Suggested Citation

  • Shu-Jen Wang & Michael Sawatzki & Ghader Darbandy & Felix Talnack & Jörn Vahland & Marc Malfois & Alexander Kloes & Stefan Mannsfeld & Hans Kleemann & Karl Leo, 2022. "Organic bipolar transistors," Nature, Nature, vol. 606(7915), pages 700-705, June.
  • Handle: RePEc:nat:nature:v:606:y:2022:i:7915:d:10.1038_s41586-022-04837-4
    DOI: 10.1038/s41586-022-04837-4
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    Cited by:

    1. Chungryeol Lee & Changhyeon Lee & Seungmin Lee & Junhwan Choi & Hocheon Yoo & Sung Gap Im, 2023. "A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors," Nature Communications, Nature, vol. 14(1), pages 1-11, December.

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