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Two-dimensional materials prospects for non-volatile spintronic memories

Author

Listed:
  • Hyunsoo Yang

    (National University of Singapore)

  • Sergio O. Valenzuela

    (Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST
    ICREA, Institució Catalana de Recerca i Estudis Avancats)

  • Mairbek Chshiev

    (Université Grenoble Alpes, CEA, CNRS, SPINTEC
    Institut Universitaire de France (IUF))

  • Sébastien Couet

    (Imec)

  • Bernard Dieny

    (Université Grenoble Alpes, CEA, CNRS, SPINTEC)

  • Bruno Dlubak

    (Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay)

  • Albert Fert

    (Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay)

  • Kevin Garello

    (Université Grenoble Alpes, CEA, CNRS, SPINTEC
    Imec)

  • Matthieu Jamet

    (Université Grenoble Alpes, CEA, CNRS, SPINTEC)

  • Dae-Eun Jeong

    (R&D Center, Samsung Electronics Co.)

  • Kangho Lee

    (Foundry Business, Samsung Electronics Co.)

  • Taeyoung Lee

    (GLOBALFOUNDRIES Singapore Pte. Ltd.)

  • Marie-Blandine Martin

    (Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay
    Thales Research and Technology)

  • Gouri Sankar Kar

    (Imec)

  • Pierre Sénéor

    (Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay)

  • Hyeon-Jin Shin

    (Inorganic Material Lab, Samsung Advanced Institute of Technology (SAIT))

  • Stephan Roche

    (Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST
    ICREA, Institució Catalana de Recerca i Estudis Avancats)

Abstract

Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.

Suggested Citation

  • Hyunsoo Yang & Sergio O. Valenzuela & Mairbek Chshiev & Sébastien Couet & Bernard Dieny & Bruno Dlubak & Albert Fert & Kevin Garello & Matthieu Jamet & Dae-Eun Jeong & Kangho Lee & Taeyoung Lee & Mari, 2022. "Two-dimensional materials prospects for non-volatile spintronic memories," Nature, Nature, vol. 606(7915), pages 663-673, June.
    • Handle: RePEc:nat:nature:v:606:y:2022:i:7915:d:10.1038_s41586-022-04768-0
    DOI: 10.1038/s41586-022-04768-0
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    Citations

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    Cited by:

    1. Lakhan Bainsla & Bing Zhao & Nilamani Behera & Anamul Md. Hoque & Lars Sjöström & Anna Martinelli & Mahmoud Abdel-Hafiez & Johan Åkerman & Saroj P. Dash, 2024. "Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Sahar Pakdel & Asbjørn Rasmussen & Alireza Taghizadeh & Mads Kruse & Thomas Olsen & Kristian S. Thygesen, 2024. "High-throughput computational stacking reveals emergent properties in natural van der Waals bilayers," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    3. Qu Yang & Donghyeon Han & Shishun Zhao & Jaimin Kang & Fei Wang & Sung-Chul Lee & Jiayu Lei & Kyung-Jin Lee & Byong-Guk Park & Hyunsoo Yang, 2024. "Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales," Nature Communications, Nature, vol. 15(1), pages 1-6, December.
    4. Luying Song & Ying Zhao & Bingqian Xu & Ruofan Du & Hui Li & Wang Feng & Junbo Yang & Xiaohui Li & Zijia Liu & Xia Wen & Yanan Peng & Yuzhu Wang & Hang Sun & Ling Huang & Yulin Jiang & Yao Cai & Xue J, 2024. "Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    5. Chenhui Zhang & Ze Jiang & Jiawei Jiang & Wa He & Junwei Zhang & Fanrui Hu & Shishun Zhao & Dongsheng Yang & Yakun Liu & Yong Peng & Hongxin Yang & Hyunsoo Yang, 2024. "Above-room-temperature chiral skyrmion lattice and Dzyaloshinskii–Moriya interaction in a van der Waals ferromagnet Fe3−xGaTe2," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    6. Guowen Yuan & Weilin Liu & Xianlei Huang & Zihao Wan & Chao Wang & Bing Yao & Wenjie Sun & Hang Zheng & Kehan Yang & Zhenjia Zhou & Yuefeng Nie & Jie Xu & Libo Gao, 2023. "Stacking transfer of wafer-scale graphene-based van der Waals superlattices," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    7. Qi Zhang & Kun Tao & Chenglong Jia & Guofu Xu & Guozhi Chai & Yalu Zuo & Baoshan Cui & Dezheng Yang & Desheng Xue & Li Xi, 2024. "Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi2Se3 trilayers by Pt interfacial engineering," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    8. Boxuan Yang & Bibek Bhujel & Daniel G. Chica & Evan J. Telford & Xavier Roy & Fatima Ibrahim & Mairbek Chshiev & Maxen Cosset-Chéneau & Bart J. van Wees, 2024. "Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    9. Wenkai Zhu & Yingmei Zhu & Tong Zhou & Xianpeng Zhang & Hailong Lin & Qirui Cui & Faguang Yan & Ziao Wang & Yongcheng Deng & Hongxin Yang & Lixia Zhao & Igor Žutić & Kirill D. Belashchenko & Kaiyou Wa, 2023. "Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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