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Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

Author

Listed:
  • Kibum Kang

    (Cornell University
    University of Chicago
    James Franck Institute, University of Chicago)

  • Kan-Heng Lee

    (School of Applied and Engineering Physics, Cornell University
    Institute for Molecular Engineering, University of Chicago)

  • Yimo Han

    (School of Applied and Engineering Physics, Cornell University)

  • Hui Gao

    (Cornell University
    University of Chicago)

  • Saien Xie

    (School of Applied and Engineering Physics, Cornell University
    Institute for Molecular Engineering, University of Chicago)

  • David A. Muller

    (School of Applied and Engineering Physics, Cornell University
    Kavli Institute at Cornell for Nanoscale Science, Cornell University)

  • Jiwoong Park

    (Cornell University
    University of Chicago
    James Franck Institute, University of Chicago
    Institute for Molecular Engineering, University of Chicago)

Abstract

Layer-by-layer stacking enables the construction of transition-metal dichalcogenide van der Waals heterostructures with high-quality, uniform interfaces and tunable electrical properties.

Suggested Citation

  • Kibum Kang & Kan-Heng Lee & Yimo Han & Hui Gao & Saien Xie & David A. Muller & Jiwoong Park, 2017. "Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures," Nature, Nature, vol. 550(7675), pages 229-233, October.
    • Handle: RePEc:nat:nature:v:550:y:2017:i:7675:d:10.1038_nature23905
    DOI: 10.1038/nature23905
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    Cited by:

    1. Guowen Yuan & Weilin Liu & Xianlei Huang & Zihao Wan & Chao Wang & Bing Yao & Wenjie Sun & Hang Zheng & Kehan Yang & Zhenjia Zhou & Yuefeng Nie & Jie Xu & Libo Gao, 2023. "Stacking transfer of wafer-scale graphene-based van der Waals superlattices," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Maosong Xie & Yueyang Jia & Chen Nie & Zuheng Liu & Alvin Tang & Shiquan Fan & Xiaoyao Liang & Li Jiang & Zhezhi He & Rui Yang, 2023. "Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    3. Sangyong Park & Dongyoung Lee & Juncheol Kang & Hojin Choi & Jin-Hong Park, 2023. "Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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