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Graphene and boron nitride lateral heterostructures for atomically thin circuitry

Author

Listed:
  • Mark P. Levendorf

    (Cornell University)

  • Cheol-Joo Kim

    (Cornell University)

  • Lola Brown

    (Cornell University)

  • Pinshane Y. Huang

    (School of Applied and Engineering Physics, Cornell University)

  • Robin W. Havener

    (School of Applied and Engineering Physics, Cornell University)

  • David A. Muller

    (School of Applied and Engineering Physics, Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • Jiwoong Park

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

Abstract

This versatile and scalable ‘patterned regrowth’ fabrication process produces one-atom-thick sheets containing lateral junctions between electrically conductive graphene and insulating hexagonal boron nitride, paving the way for flexible, transparent electronic device films.

Suggested Citation

  • Mark P. Levendorf & Cheol-Joo Kim & Lola Brown & Pinshane Y. Huang & Robin W. Havener & David A. Muller & Jiwoong Park, 2012. "Graphene and boron nitride lateral heterostructures for atomically thin circuitry," Nature, Nature, vol. 488(7413), pages 627-632, August.
    • Handle: RePEc:nat:nature:v:488:y:2012:i:7413:d:10.1038_nature11408
    DOI: 10.1038/nature11408
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    Cited by:

    1. Li, Yong & Yang, Jie & Song, Jian, 2017. "Structure models and nano energy system design for proton exchange membrane fuel cells in electric energy vehicles," Renewable and Sustainable Energy Reviews, Elsevier, vol. 67(C), pages 160-172.
    2. Li, Yong & Song, Jian & Yang, Jie, 2015. "Graphene models and nano-scale characterization technologies for fuel cell vehicle electrodes," Renewable and Sustainable Energy Reviews, Elsevier, vol. 42(C), pages 66-77.

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