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Origin of the dielectric dead layer in nanoscale capacitors

Author

Listed:
  • Massimiliano Stengel

    (University of California)

  • Nicola A. Spaldin

    (University of California)

Abstract

New theoretical work nails down the microscopic origin of 'dead layers' in nanometre-scale capacitors and demonstrates that it is an intrinsic effect. The results provide practical guidelines for minimizing the deleterious effects of the dielectric dead layer, for example regarding the choice of electrode.

Suggested Citation

  • Massimiliano Stengel & Nicola A. Spaldin, 2006. "Origin of the dielectric dead layer in nanoscale capacitors," Nature, Nature, vol. 443(7112), pages 679-682, October.
    • Handle: RePEc:nat:nature:v:443:y:2006:i:7112:d:10.1038_nature05148
    DOI: 10.1038/nature05148
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    Cited by:

    1. Zheyi Lu & Yang Chen & Weiqi Dang & Lingan Kong & Quanyang Tao & Likuan Ma & Donglin Lu & Liting Liu & Wanying Li & Zhiwei Li & Xiao Liu & Yiliu Wang & Xidong Duan & Lei Liao & Yuan Liu, 2023. "Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    2. Jiabiao Chen & Zhaochao Liu & Xinyue Dong & Zhansheng Gao & Yuxuan Lin & Yuyu He & Yingnan Duan & Tonghuai Cheng & Zhengyang Zhou & Huixia Fu & Feng Luo & Jinxiong Wu, 2023. "Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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