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Spin-torque diode effect in magnetic tunnel junctions

Author

Listed:
  • A. A. Tulapurkar

    (National Institute of Advanced Industrial Science and Technology (AIST)
    CREST, Japan Science and Technology Agency (JST)
    Stanford University)

  • Y. Suzuki

    (National Institute of Advanced Industrial Science and Technology (AIST)
    CREST, Japan Science and Technology Agency (JST)
    Osaka University)

  • A. Fukushima

    (National Institute of Advanced Industrial Science and Technology (AIST)
    CREST, Japan Science and Technology Agency (JST))

  • H. Kubota

    (National Institute of Advanced Industrial Science and Technology (AIST)
    CREST, Japan Science and Technology Agency (JST))

  • H. Maehara

    (Canon ANELVA Corporation)

  • K. Tsunekawa

    (Canon ANELVA Corporation)

  • D. D. Djayaprawira

    (Canon ANELVA Corporation)

  • N. Watanabe

    (Canon ANELVA Corporation)

  • S. Yuasa

    (National Institute of Advanced Industrial Science and Technology (AIST)
    CREST, Japan Science and Technology Agency (JST))

Abstract

There is currently much interest in the development of ‘spintronic’ devices, in which harnessing the spins of electrons (rather than just their charges) is anticipated to provide new functionalities that go beyond those possible with conventional electronic devices. One widely studied example of an effect that has its roots in the electron's spin degree of freedom is the torque exerted by a spin-polarized electric current on the spin moment of a nanometre-scale magnet. This torque causes the magnetic moment to rotate1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19 at potentially useful frequencies. Here we report a very different phenomenon that is also based on the interplay between spin dynamics and spin-dependent transport, and which arises from unusual diode behaviour. We show that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction20,21,22 can generate a measurable direct-current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect: at resonance (which can be tuned by an external magnetic field), the structure exhibits different resistance states depending on the direction of the current. This behaviour is markedly different from that of a conventional semiconductor diode23, and could form the basis of a nanometre-scale radio-frequency detector in telecommunication circuits.

Suggested Citation

  • A. A. Tulapurkar & Y. Suzuki & A. Fukushima & H. Kubota & H. Maehara & K. Tsunekawa & D. D. Djayaprawira & N. Watanabe & S. Yuasa, 2005. "Spin-torque diode effect in magnetic tunnel junctions," Nature, Nature, vol. 438(7066), pages 339-342, November.
    • Handle: RePEc:nat:nature:v:438:y:2005:i:7066:d:10.1038_nature04207
    DOI: 10.1038/nature04207
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    Citations

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    Cited by:

    1. Yuqiang Wang & Yu Zhang & Chaozhong Li & Jinwu Wei & Bin He & Hongjun Xu & Jihao Xia & Xuming Luo & Jiahui Li & Jing Dong & Wenqing He & Zhengren Yan & Wenlong Yang & Fusheng Ma & Guozhi Chai & Peng Y, 2024. "Ultrastrong to nearly deep-strong magnon-magnon coupling with a high degree of freedom in synthetic antiferromagnets," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Takuya Funatsu & Shun Kanai & Jun’ichi Ieda & Shunsuke Fukami & Hideo Ohno, 2022. "Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    3. Binoy K. Hazra & Banabir Pal & Jae-Chun Jeon & Robin R. Neumann & Börge Göbel & Bharat Grover & Hakan Deniz & Andriy Styervoyedov & Holger Meyerheim & Ingrid Mertig & See-Hun Yang & Stuart S. P. Parki, 2023. "Generation of out-of-plane polarized spin current by spin swapping," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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