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Ultrahigh-quality silicon carbide single crystals

Author

Listed:
  • Daisuke Nakamura

    (Toyota Central R&D Laboratories, Inc.)

  • Itaru Gunjishima

    (Toyota Central R&D Laboratories, Inc.)

  • Satoshi Yamaguchi

    (Toyota Central R&D Laboratories, Inc.)

  • Tadashi Ito

    (Toyota Central R&D Laboratories, Inc.)

  • Atsuto Okamoto

    (Toyota Central R&D Laboratories, Inc.)

  • Hiroyuki Kondo

    (Research Laboratories, DENSO Corporation, 500-1)

  • Shoichi Onda

    (Research Laboratories, DENSO Corporation, 500-1)

  • Kazumasa Takatori

    (Toyota Central R&D Laboratories, Inc.)

Abstract

Silicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices1,2. Careful consideration of the thermal conditions3,4,5,6 in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes)7,8,9, inclusions, small-angle boundaries and long-range lattice warp has been reduced10,11. But some macroscopic defects (about 1–10 cm-2) and a large density of elementary dislocations (∼ 104 cm-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12–16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth)17, to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems.

Suggested Citation

  • Daisuke Nakamura & Itaru Gunjishima & Satoshi Yamaguchi & Tadashi Ito & Atsuto Okamoto & Hiroyuki Kondo & Shoichi Onda & Kazumasa Takatori, 2004. "Ultrahigh-quality silicon carbide single crystals," Nature, Nature, vol. 430(7003), pages 1009-1012, August.
  • Handle: RePEc:nat:nature:v:430:y:2004:i:7003:d:10.1038_nature02810
    DOI: 10.1038/nature02810
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    Cited by:

    1. Keith Powell & Liwei Li & Amirhassan Shams-Ansari & Jianfu Wang & Debin Meng & Neil Sinclair & Jiangdong Deng & Marko Lončar & Xiaoke Yi, 2022. "Integrated silicon carbide electro-optic modulator," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    2. Zhe Cheng & Jianbo Liang & Keisuke Kawamura & Hao Zhou & Hidetoshi Asamura & Hiroki Uratani & Janak Tiwari & Samuel Graham & Yutaka Ohno & Yasuyoshi Nagai & Tianli Feng & Naoteru Shigekawa & David G. , 2022. "High thermal conductivity in wafer-scale cubic silicon carbide crystals," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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