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Non-saturating magnetoresistance in heavily disordered semiconductors

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  • M. M. Parish

    (University of Cambridge)

  • P. B. Littlewood

    (University of Cambridge
    National High Magnetic Field Laboratory, Pulsed Field Facility, LANL)

Abstract

The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of the order of 1 T (refs 1, 2). A surprising exception to this behaviour has recently been observed in doped silver chalcogenides3,4,5, which exhibit an anomalously large, quasi-linear magnetoresistive response that extends down to low fields and survives, even at extreme fields of 55 T and beyond. Here we present a simple model of a macroscopically disordered and strongly inhomogeneous semiconductor that exhibits a similar non-saturating magnetoresistance. In addition to providing a possible explanation for the behaviour of doped silver chalcogenides, our model suggests potential routes for the construction of magnetic field sensors with a large, controllable and linear response.

Suggested Citation

  • M. M. Parish & P. B. Littlewood, 2003. "Non-saturating magnetoresistance in heavily disordered semiconductors," Nature, Nature, vol. 426(6963), pages 162-165, November.
    • Handle: RePEc:nat:nature:v:426:y:2003:i:6963:d:10.1038_nature02073
    DOI: 10.1038/nature02073
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    Cited by:

    1. J. Ayres & M. Berben & C. Duffy & R. D. H. Hinlopen & Y.-T. Hsu & A. Cuoghi & M. Leroux & I. Gilmutdinov & M. Massoudzadegan & D. Vignolles & Y. Huang & T. Kondo & T. Takeuchi & S. Friedemann & A. Car, 2024. "Universal correlation between H-linear magnetoresistance and T-linear resistivity in high-temperature superconductors," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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