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Terahertz semiconductor-heterostructure laser

Author

Listed:
  • Rüdeger Köhler

    (NEST-INFM and Scuola Normale Superiore)

  • Alessandro Tredicucci

    (NEST-INFM and Scuola Normale Superiore)

  • Fabio Beltram

    (NEST-INFM and Scuola Normale Superiore)

  • Harvey E. Beere

    (University of Cambridge)

  • Edmund H. Linfield

    (University of Cambridge)

  • A. Giles Davies

    (University of Cambridge)

  • David A. Ritchie

    (University of Cambridge)

  • Rita C. Iotti

    (INFM and Dipartimento di Fisica, Politecnico di Torino)

  • Fausto Rossi

    (INFM and Dipartimento di Fisica, Politecnico di Torino)

Abstract

Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1–10 THz; 1 THz = 1012 Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications—for example, chemical detection, astronomy and medical imaging1,2,3,4. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources5,6,7,8,9. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm-2 up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.

Suggested Citation

  • Rüdeger Köhler & Alessandro Tredicucci & Fabio Beltram & Harvey E. Beere & Edmund H. Linfield & A. Giles Davies & David A. Ritchie & Rita C. Iotti & Fausto Rossi, 2002. "Terahertz semiconductor-heterostructure laser," Nature, Nature, vol. 417(6885), pages 156-159, May.
    • Handle: RePEc:nat:nature:v:417:y:2002:i:6885:d:10.1038_417156a
    DOI: 10.1038/417156a
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    Cited by:

    1. Muhammad Mirza & Rehman Muqadass & Abdul Rahman Chaudhary & Ahmad Bazmi Nisar, 2016. "Public awareness about e-tagging device on security Check posts & toll-plazas for the smooth traffic management and reduction in terrorist activities in Pakistan," Post-Print halshs-01355911, HAL.
    2. Xuecou Tu & Yichen Zhang & Shuyu Zhou & Wenjing Tang & Xu Yan & Yunjie Rui & Wohu Wang & Bingnan Yan & Chen Zhang & Ziyao Ye & Hongkai Shi & Runfeng Su & Chao Wan & Daxing Dong & Ruiying Xu & Qing-Yua, 2024. "Tamm-cavity terahertz detector," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Guifeng Liu, 2013. "Visualization of patents and papers in terahertz technology: a comparative study," Scientometrics, Springer;Akadémiai Kiadó, vol. 94(3), pages 1037-1056, March.

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