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III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Author

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  • Romain Cariou

    (Fraunhofer Institute for Solar Energy Systems ISE
    Université Grenoble Alpes, CEA, LITEN, INES)

  • Jan Benick

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Frank Feldmann

    (Fraunhofer Institute for Solar Energy Systems ISE
    University of Freiburg)

  • Oliver Höhn

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Hubert Hauser

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Paul Beutel

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Nasser Razek

    (EV Group E. Thallner GmbH)

  • Markus Wimplinger

    (EV Group E. Thallner GmbH)

  • Benedikt Bläsi

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • David Lackner

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Martin Hermle

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Gerald Siefer

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Stefan W. Glunz

    (Fraunhofer Institute for Solar Energy Systems ISE
    University of Freiburg)

  • Andreas W. Bett

    (Fraunhofer Institute for Solar Energy Systems ISE)

  • Frank Dimroth

    (Fraunhofer Institute for Solar Energy Systems ISE)

Abstract

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III–V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III–V/Si solar cells. Here, we demonstrate a III–V/Si cell reaching similar performances to standard III–V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III–V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Suggested Citation

  • Romain Cariou & Jan Benick & Frank Feldmann & Oliver Höhn & Hubert Hauser & Paul Beutel & Nasser Razek & Markus Wimplinger & Benedikt Bläsi & David Lackner & Martin Hermle & Gerald Siefer & Stefan W. , 2018. "III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration," Nature Energy, Nature, vol. 3(4), pages 326-333, April.
    • Handle: RePEc:nat:natene:v:3:y:2018:i:4:d:10.1038_s41560-018-0125-0
    DOI: 10.1038/s41560-018-0125-0
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    Cited by:

    1. Salah, Mostafa M. & Saeed, Ahmed & Mousa, Mohamed & Abouelatta, Mohamed & Zekry, A. & Shaker, Ahmed & Amer, Fathy Z. & Mubarak, Roaa I., 2024. "Numerical analysis of carbon-based perovskite tandem solar cells: Pathways towards high efficiency and stability," Renewable and Sustainable Energy Reviews, Elsevier, vol. 189(PB).
    2. Zhang, Xueyan & Zhang, Youyang & Zheng, Canyang & Chen, Fei, 2023. "Model construction and performance investigation of compound parabolic concentrator based on satellite solar wing photovoltaic arrays," Energy, Elsevier, vol. 285(C).

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