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Large-area and bright pulsed electroluminescence in monolayer semiconductors

Author

Listed:
  • Der-Hsien Lien

    (University of California
    Lawrence Berkeley National Laboratory)

  • Matin Amani

    (University of California
    Lawrence Berkeley National Laboratory)

  • Sujay B. Desai

    (University of California
    Lawrence Berkeley National Laboratory)

  • Geun Ho Ahn

    (University of California
    Lawrence Berkeley National Laboratory)

  • Kevin Han

    (University of California)

  • Jr-Hau He

    (King Abdullah University of Science & Technology)

  • Joel W. Ager

    (Lawrence Berkeley National Laboratory)

  • Ming C. Wu

    (University of California)

  • Ali Javey

    (University of California
    Lawrence Berkeley National Laboratory)

Abstract

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Suggested Citation

  • Der-Hsien Lien & Matin Amani & Sujay B. Desai & Geun Ho Ahn & Kevin Han & Jr-Hau He & Joel W. Ager & Ming C. Wu & Ali Javey, 2018. "Large-area and bright pulsed electroluminescence in monolayer semiconductors," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-03218-8
    DOI: 10.1038/s41467-018-03218-8
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    Cited by:

    1. Hugo Henck & Diego Mauro & Daniil Domaretskiy & Marc Philippi & Shahriar Memaran & Wenkai Zheng & Zhengguang Lu & Dmitry Shcherbakov & Chun Ning Lau & Dmitry Smirnov & Luis Balicas & Kenji Watanabe & , 2022. "Light sources with bias tunable spectrum based on van der Waals interface transistors," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    2. Yongjun Lee & Johnathas D’arf Severo Forte & Andrey Chaves & Anshuman Kumar & Trang Thu Tran & Youngbum Kim & Shrawan Roy & Takashi Taniguchi & Kenji Watanabe & Alexey Chernikov & Joon I. Jang & Tony , 2021. "Boosting quantum yields in two-dimensional semiconductors via proximal metal plates," Nature Communications, Nature, vol. 12(1), pages 1-9, December.

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