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Boosting quantum yields in two-dimensional semiconductors via proximal metal plates

Author

Listed:
  • Yongjun Lee

    (Sungkyunkwan University)

  • Johnathas D’arf Severo Forte

    (Universidade Federal do Ceará, Campus do Pici)

  • Andrey Chaves

    (Universidade Federal do Ceará, Campus do Pici
    University of Antwerp)

  • Anshuman Kumar

    (Indian Institute of Technology Bombay)

  • Trang Thu Tran

    (Sungkyunkwan University)

  • Youngbum Kim

    (Sungkyunkwan University)

  • Shrawan Roy

    (Sungkyunkwan University)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Alexey Chernikov

    (Technische Universität Dresden)

  • Joon I. Jang

    (Sogang University)

  • Tony Low

    (University of Minnesota)

  • Jeongyong Kim

    (Sungkyunkwan University)

Abstract

Monolayer transition metal dichalcogenides (1L-TMDs) have tremendous potential as atomically thin, direct bandgap semiconductors that can be used as convenient building blocks for quantum photonic devices. However, the short exciton lifetime due to the defect traps and the strong exciton-exciton interaction in TMDs has significantly limited the efficiency of exciton emission from this class of materials. Here, we show that exciton-exciton interaction in 1L-WS2 can be effectively screened using an ultra-flat Au film substrate separated by multilayers of hexagonal boron nitride. Under this geometry, induced dipolar exciton-exciton interaction becomes quadrupole-quadrupole interaction because of effective image dipoles formed within the metal. The suppressed exciton-exciton interaction leads to a significantly improved quantum yield by an order of magnitude, which is also accompanied by a reduction in the exciton-exciton annihilation (EEA) rate, as confirmed by time-resolved optical measurements. A theoretical model accounting for the screening of the dipole-dipole interaction is in a good agreement with the dependence of EEA on exciton densities. Our results suggest that fundamental EEA processes in the TMD can be engineered through proximal metallic screening, which represents a practical approach towards high-efficiency 2D light emitters.

Suggested Citation

  • Yongjun Lee & Johnathas D’arf Severo Forte & Andrey Chaves & Anshuman Kumar & Trang Thu Tran & Youngbum Kim & Shrawan Roy & Takashi Taniguchi & Kenji Watanabe & Alexey Chernikov & Joon I. Jang & Tony , 2021. "Boosting quantum yields in two-dimensional semiconductors via proximal metal plates," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27418-x
    DOI: 10.1038/s41467-021-27418-x
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    References listed on IDEAS

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    1. Der-Hsien Lien & Matin Amani & Sujay B. Desai & Geun Ho Ahn & Kevin Han & Jr-Hau He & Joel W. Ager & Ming C. Wu & Ali Javey, 2018. "Large-area and bright pulsed electroluminescence in monolayer semiconductors," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
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