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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Author

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  • Xiao-Xi Li

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

  • Zhi-Qiang Fan

    (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences)

  • Pei-Zhi Liu

    (Taiyuan University of Technology)

  • Mao-Lin Chen

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

  • Xin Liu

    (Peking University
    Collaborative Innovation Center of Quantum Matter)

  • Chuan-Kun Jia

    (Changsha University of Science & Technology)

  • Dong-Ming Sun

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

  • Xiang-Wei Jiang

    (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences)

  • Zheng Han

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

  • Vincent Bouchiat

    (University of Grenoble Alpes, CNRS, Institut Néel)

  • Jun-Jie Guo

    (Taiyuan University of Technology)

  • Jian-Hao Chen

    (Peking University
    Collaborative Innovation Center of Quantum Matter)

  • Zhi-Dong Zhang

    (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
    University of Science and Technology of China)

Abstract

Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.

Suggested Citation

  • Xiao-Xi Li & Zhi-Qiang Fan & Pei-Zhi Liu & Mao-Lin Chen & Xin Liu & Chuan-Kun Jia & Dong-Ming Sun & Xiang-Wei Jiang & Zheng Han & Vincent Bouchiat & Jun-Jie Guo & Jian-Hao Chen & Zhi-Dong Zhang, 2017. "Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor," Nature Communications, Nature, vol. 8(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-01128-9
    DOI: 10.1038/s41467-017-01128-9
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    Cited by:

    1. Yaoqiang Zhou & Lei Tong & Zefeng Chen & Li Tao & Yue Pang & Jian-Bin Xu, 2023. "Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Xiaodong Zhang & Chenxi Huang & Zeyu Li & Jun Fu & Jiaran Tian & Zhuping Ouyang & Yuliang Yang & Xiang Shao & Yulei Han & Zhenhua Qiao & Hualing Zeng, 2024. "Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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