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Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2

Author

Listed:
  • J. Y. Liu

    (Tulane University)

  • J. Hu

    (Tulane University)

  • D. Graf

    (National High Magnetic Field Lab)

  • T. Zou

    (Michigan State University)

  • M. Zhu

    (Michigan State University)

  • Y. Shi

    (University of California)

  • S. Che

    (The Ohio State University)

  • S. M. A. Radmanesh

    (University of New Orleans)

  • C. N. Lau

    (The Ohio State University)

  • L. Spinu

    (University of New Orleans)

  • H. B. Cao

    (Oak Ridge National Laboratory)

  • X. Ke

    (Michigan State University)

  • Z. Q. Mao

    (Tulane University)

Abstract

Relativistic fermions in topological quantum materials are characterized by linear energy–momentum dispersion near band crossing points. Under magnetic fields, relativistic fermions acquire Berry phase of π in cyclotron motion, leading to a zeroth Landau level (LL) at the crossing point, a signature unique to relativistic fermions. Here we report the unusual interlayer quantum transport behavior resulting from the zeroth LL mode observed in the time reversal symmetry breaking type II Weyl semimetal YbMnBi2. The interlayer magnetoresistivity and Hall conductivity of this material are found to exhibit surprising angular dependences under high fields, which can be well fitted by a model, which considers the interlayer quantum tunneling transport of the zeroth LL's Weyl fermions. Our results shed light on the unusual role of zeroth LLl mode in transport.

Suggested Citation

  • J. Y. Liu & J. Hu & D. Graf & T. Zou & M. Zhu & Y. Shi & S. Che & S. M. A. Radmanesh & C. N. Lau & L. Spinu & H. B. Cao & X. Ke & Z. Q. Mao, 2017. "Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2," Nature Communications, Nature, vol. 8(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_s41467-017-00673-7
    DOI: 10.1038/s41467-017-00673-7
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    Cited by:

    1. Antu Laha & Suguru Yoshida & Francisco Marques dos Santos Vieira & Hemian Yi & Seng Huat Lee & Sai Venkata Gayathri Ayyagari & Yingdong Guan & Lujin Min & Jose Gonzalez Jimenez & Leixin Miao & David G, 2024. "High-entropy engineering of the crystal and electronic structures in a Dirac material," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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