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Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

Author

Listed:
  • Yang Liu

    (Key Laboratory for the Physics and Chemistry of Nanodevices and Academy for Advanced Interdisciplinary Studies, Peking University)

  • Sheng Wang

    (Peking University)

  • Huaping Liu

    (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
    Collaborative Innovation Center of Quantum Matter)

  • Lian-Mao Peng

    (Key Laboratory for the Physics and Chemistry of Nanodevices and Academy for Advanced Interdisciplinary Studies, Peking University
    Peking University)

Abstract

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

Suggested Citation

  • Yang Liu & Sheng Wang & Huaping Liu & Lian-Mao Peng, 2017. "Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system," Nature Communications, Nature, vol. 8(1), pages 1-8, August.
  • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15649
    DOI: 10.1038/ncomms15649
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    Cited by:

    1. Wenhui Wang & Ke Li & Jun Lan & Mei Shen & Zhongrui Wang & Xuewei Feng & Hongyu Yu & Kai Chen & Jiamin Li & Feichi Zhou & Longyang Lin & Panpan Zhang & Yida Li, 2023. "CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor," Nature Communications, Nature, vol. 14(1), pages 1-11, December.

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