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Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1

Author

Listed:
  • Abhinav Prakash

    (Chemical Engineering and Materials Science, University of Minnesota–Twin Cities)

  • Peng Xu

    (Chemical Engineering and Materials Science, University of Minnesota–Twin Cities)

  • Alireza Faghaninia

    (Environmental, and Chemical Engineering, Washington University)

  • Sudhanshu Shukla

    (Lawrence Berkeley National Laboratory
    Energy Research Institute, Interdisciplinary Graduate School, School of Materials Science and Engineering, Nanyang Technological University)

  • Joel W. Ager

    (Lawrence Berkeley National Laboratory
    Materials Science and Engineering, University of California at Berkeley)

  • Cynthia S. Lo

    (Environmental, and Chemical Engineering, Washington University)

  • Bharat Jalan

    (Chemical Engineering and Materials Science, University of Minnesota–Twin Cities)

Abstract

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of significant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO3 films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 104 S cm−1. Significantly, these films show room temperature mobilities up to 120 cm2 V−1 s−1 even at carrier concentrations above 3 × 1020 cm−3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III–N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.

Suggested Citation

  • Abhinav Prakash & Peng Xu & Alireza Faghaninia & Sudhanshu Shukla & Joel W. Ager & Cynthia S. Lo & Bharat Jalan, 2017. "Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1," Nature Communications, Nature, vol. 8(1), pages 1-9, August.
    • Handle: RePEc:nat:natcom:v:8:y:2017:i:1:d:10.1038_ncomms15167
    DOI: 10.1038/ncomms15167
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    Cited by:

    1. Sandeep Kumar Maurya & Hazel Rose Galvan & Gaurav Gautam & Xiaojie Xu, 2022. "Recent Progress in Transparent Conductive Materials for Photovoltaics," Energies, MDPI, vol. 15(22), pages 1-25, November.
    2. Jihyun Baek & Qiu Jin & Nathan Scott Johnson & Yue Jiang & Rui Ning & Apurva Mehta & Samira Siahrostami & Xiaolin Zheng, 2022. "Discovery of LaAlO3 as an efficient catalyst for two-electron water electrolysis towards hydrogen peroxide," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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