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Mobility overestimation due to gated contacts in organic field-effect transistors

Author

Listed:
  • Emily G. Bittle

    (National Institute of Standards and Technology
    Wake Forest University)

  • James I. Basham

    (National Institute of Standards and Technology
    The Pennsylvania State University)

  • Thomas N. Jackson

    (The Pennsylvania State University)

  • Oana D. Jurchescu

    (Wake Forest University)

  • David J. Gundlach

    (National Institute of Standards and Technology)

Abstract

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more.

Suggested Citation

  • Emily G. Bittle & James I. Basham & Thomas N. Jackson & Oana D. Jurchescu & David J. Gundlach, 2016. "Mobility overestimation due to gated contacts in organic field-effect transistors," Nature Communications, Nature, vol. 7(1), pages 1-7, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10908
    DOI: 10.1038/ncomms10908
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    Cited by:

    1. Sang-hun Lee & Taek Joon Kim & Eunji Lee & Dayeong Kwon & Jeongyong Kim & Jinsoo Joo, 2023. "Observation of aligned dipoles and angular chromism of exciplexes in organic molecular heterostructures," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Max C. Lemme & Deji Akinwande & Cedric Huyghebaert & Christoph Stampfer, 2022. "2D materials for future heterogeneous electronics," Nature Communications, Nature, vol. 13(1), pages 1-5, December.

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