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Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

Author

Listed:
  • Zhao Zhao

    (Stanford University)

  • Haijun Zhang

    (Stanford University
    Nanjing University)

  • Hongtao Yuan

    (Geballe Laboratory for Advanced Materials, Stanford University
    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory)

  • Shibing Wang

    (Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
    Stanford University)

  • Yu Lin

    (Stanford University)

  • Qiaoshi Zeng

    (HPSynC, Geophysical Laboratory, Carnegie Institution of Washington
    Center for High Pressure Science and Technology Advanced Research)

  • Gang Xu

    (Geballe Laboratory for Advanced Materials, Stanford University)

  • Zhenxian Liu

    (Geophysical Laboratory, Carnegie Institution of Washington)

  • G. K. Solanki

    (Sardar Patel University, Vallabh Vidyanagar)

  • K. D. Patel

    (Sardar Patel University, Vallabh Vidyanagar)

  • Yi Cui

    (Geballe Laboratory for Advanced Materials, Stanford University
    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory)

  • Harold Y. Hwang

    (Geballe Laboratory for Advanced Materials, Stanford University
    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory)

  • Wendy L. Mao

    (Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
    Stanford University)

Abstract

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ∼60 GPa using multiple experimental techniques and ab-initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.

Suggested Citation

  • Zhao Zhao & Haijun Zhang & Hongtao Yuan & Shibing Wang & Yu Lin & Qiaoshi Zeng & Gang Xu & Zhenxian Liu & G. K. Solanki & K. D. Patel & Yi Cui & Harold Y. Hwang & Wendy L. Mao, 2015. "Pressure induced metallization with absence of structural transition in layered molybdenum diselenide," Nature Communications, Nature, vol. 6(1), pages 1-8, November.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms8312
    DOI: 10.1038/ncomms8312
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    Cited by:

    1. Lingyun Tang & Zhongquan Mao & Chutian Wang & Qi Fu & Chen Wang & Yichi Zhang & Jingyi Shen & Yuefeng Yin & Bin Shen & Dayong Tan & Qian Li & Yonggang Wang & Nikhil V. Medhekar & Jie Wu & Huiqiu Yuan , 2023. "Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions," Nature Communications, Nature, vol. 14(1), pages 1-8, December.

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