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Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Author

Listed:
  • Zhihao Yu

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Yiming Pan

    (School of Physics, Nanjing University)

  • Yuting Shen

    (SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University)

  • Zilu Wang

    (Southeast University)

  • Zhun-Yong Ong

    (Institute of High Performance Computing)

  • Tao Xu

    (SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University)

  • Run Xin

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Lijia Pan

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Baigeng Wang

    (School of Physics, Nanjing University)

  • Litao Sun

    (SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University)

  • Jinlan Wang

    (Southeast University)

  • Gang Zhang

    (Institute of High Performance Computing)

  • Yong Wei Zhang

    (Institute of High Performance Computing)

  • Yi Shi

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • Xinran Wang

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

Abstract

Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here we develop a facile low-temperature thiol chemistry route to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility >80 cm2 V−1 s−1 is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.

Suggested Citation

  • Zhihao Yu & Yiming Pan & Yuting Shen & Zilu Wang & Zhun-Yong Ong & Tao Xu & Run Xin & Lijia Pan & Baigeng Wang & Litao Sun & Jinlan Wang & Gang Zhang & Yong Wei Zhang & Yi Shi & Xinran Wang, 2014. "Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering," Nature Communications, Nature, vol. 5(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6290
    DOI: 10.1038/ncomms6290
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    Cited by:

    1. Jinbing Cheng & Junbao He & Chunying Pu & Congbin Liu & Xiaoyu Huang & Deyang Zhang & Hailong Yan & Paul K. Chu, 2022. "MoS 2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness," Energies, MDPI, vol. 15(17), pages 1-8, August.
    2. Zhaojun Li & Hope Bretscher & Yunwei Zhang & Géraud Delport & James Xiao & Alpha Lee & Samuel D. Stranks & Akshay Rao, 2021. "Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement," Nature Communications, Nature, vol. 12(1), pages 1-9, December.

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