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MoS 2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Author

Listed:
  • Jinbing Cheng

    (Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)

  • Junbao He

    (Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)

  • Chunying Pu

    (Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)

  • Congbin Liu

    (Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)

  • Xiaoyu Huang

    (Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China)

  • Deyang Zhang

    (Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, China)

  • Hailong Yan

    (Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, China)

  • Paul K. Chu

    (Department of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China)

Abstract

Molybdenum disulfide (MoS 2 ) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height ( Φ B ) and contact resistance are obstacles hampering the fabrication of high-power MoS 2 transistors. The electronic transport characteristics of MoS 2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS 2 channel and copper (Cu) metal–TiO 2 -MoS 2 channel. Contact optimization is conducted by adjusting the thickness of the TiO 2 interlayer between the metal and MoS 2 . The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO 2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.

Suggested Citation

  • Jinbing Cheng & Junbao He & Chunying Pu & Congbin Liu & Xiaoyu Huang & Deyang Zhang & Hailong Yan & Paul K. Chu, 2022. "MoS 2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness," Energies, MDPI, vol. 15(17), pages 1-8, August.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:17:p:6169-:d:897290
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    References listed on IDEAS

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    1. Zhihao Yu & Yiming Pan & Yuting Shen & Zilu Wang & Zhun-Yong Ong & Tao Xu & Run Xin & Lijia Pan & Baigeng Wang & Litao Sun & Jinlan Wang & Gang Zhang & Yong Wei Zhang & Yi Shi & Xinran Wang, 2014. "Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering," Nature Communications, Nature, vol. 5(1), pages 1-7, December.
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