IDEAS home Printed from https://ideas.repec.org/a/nat/natcom/v5y2014i1d10.1038_ncomms5598.html
   My bibliography  Save this article

Thermoelectric Seebeck effect in oxide-based resistive switching memory

Author

Listed:
  • Ming Wang

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Chong Bi

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Ling Li

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Shibing Long

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Qi Liu

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Hangbing Lv

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Nianduan Lu

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Pengxiao Sun

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

  • Ming Liu

    (Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)

Abstract

Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties. Here we investigate the intrinsic electronic transport mechanism in such conductive filament by measuring thermoelectric Seebeck effects. We show that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary. Moreover, at low resistance states, we observe a clear semiconductor–metal transition around 150 K. These results provide insight in understanding resistive switching process and establish a basic framework for modelling resistive switching behaviour.

Suggested Citation

  • Ming Wang & Chong Bi & Ling Li & Shibing Long & Qi Liu & Hangbing Lv & Nianduan Lu & Pengxiao Sun & Ming Liu, 2014. "Thermoelectric Seebeck effect in oxide-based resistive switching memory," Nature Communications, Nature, vol. 5(1), pages 1-6, December.
  • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5598
    DOI: 10.1038/ncomms5598
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/ncomms5598
    File Function: Abstract
    Download Restriction: no

    File URL: https://libkey.io/10.1038/ncomms5598?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Min Cai & Mao-Peng Miao & Yunfan Liang & Zeyu Jiang & Zhen-Yu Liu & Wen-Hao Zhang & Xin Liao & Lan-Fang Zhu & Damien West & Shengbai Zhang & Ying-Shuang Fu, 2023. "Manipulating single excess electrons in monolayer transition metal dihalide," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. Wojtusiak, A.M. & Balanov, A.G. & Savel’ev, S.E., 2021. "Intermittent and metastable chaos in a memristive artificial neuron with inertia," Chaos, Solitons & Fractals, Elsevier, vol. 142(C).

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5598. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.