Author
Listed:
- Ming Wang
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Chong Bi
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Ling Li
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Shibing Long
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Qi Liu
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Hangbing Lv
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Nianduan Lu
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Pengxiao Sun
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
- Ming Liu
(Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences)
Abstract
Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties. Here we investigate the intrinsic electronic transport mechanism in such conductive filament by measuring thermoelectric Seebeck effects. We show that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary. Moreover, at low resistance states, we observe a clear semiconductor–metal transition around 150 K. These results provide insight in understanding resistive switching process and establish a basic framework for modelling resistive switching behaviour.
Suggested Citation
Ming Wang & Chong Bi & Ling Li & Shibing Long & Qi Liu & Hangbing Lv & Nianduan Lu & Pengxiao Sun & Ming Liu, 2014.
"Thermoelectric Seebeck effect in oxide-based resistive switching memory,"
Nature Communications, Nature, vol. 5(1), pages 1-6, December.
Handle:
RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5598
DOI: 10.1038/ncomms5598
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Citations
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Cited by:
- Min Cai & Mao-Peng Miao & Yunfan Liang & Zeyu Jiang & Zhen-Yu Liu & Wen-Hao Zhang & Xin Liao & Lan-Fang Zhu & Damien West & Shengbai Zhang & Ying-Shuang Fu, 2023.
"Manipulating single excess electrons in monolayer transition metal dihalide,"
Nature Communications, Nature, vol. 14(1), pages 1-9, December.
- Wojtusiak, A.M. & Balanov, A.G. & Savel’ev, S.E., 2021.
"Intermittent and metastable chaos in a memristive artificial neuron with inertia,"
Chaos, Solitons & Fractals, Elsevier, vol. 142(C).
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