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Manipulating single excess electrons in monolayer transition metal dihalide

Author

Listed:
  • Min Cai

    (Huazhong University of Science and Technology)

  • Mao-Peng Miao

    (Huazhong University of Science and Technology)

  • Yunfan Liang

    (Rensselaer Polytechnic Institute)

  • Zeyu Jiang

    (Rensselaer Polytechnic Institute)

  • Zhen-Yu Liu

    (Huazhong University of Science and Technology)

  • Wen-Hao Zhang

    (Huazhong University of Science and Technology
    Huazhong University of Science and Technology)

  • Xin Liao

    (Huazhong University of Science and Technology)

  • Lan-Fang Zhu

    (Huazhong University of Science and Technology)

  • Damien West

    (Rensselaer Polytechnic Institute)

  • Shengbai Zhang

    (Rensselaer Polytechnic Institute)

  • Ying-Shuang Fu

    (Huazhong University of Science and Technology
    Huazhong University of Science and Technology
    Wuhan Institute of Quantum Technology)

Abstract

Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons in monolayer CoCl2, that are grown on HOPG substrate via molecular beam epitaxy. Two types of polarons are identified, both inducing upward local band bending, but exhibiting distinct appearances, lattice occupations and polaronic states. First principles calculations unveil origin of polarons that are stabilized by cooperative electron-electron and electron-phonon interactions. Both types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, as driven by tip electric field and inelastic electron tunneling effect. This finding identifies the rich category of polarons in CoCl2 and their feasibility of precise control unprecedently, which can be generalized to other transition metal halides.

Suggested Citation

  • Min Cai & Mao-Peng Miao & Yunfan Liang & Zeyu Jiang & Zhen-Yu Liu & Wen-Hao Zhang & Xin Liao & Lan-Fang Zhu & Damien West & Shengbai Zhang & Ying-Shuang Fu, 2023. "Manipulating single excess electrons in monolayer transition metal dihalide," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39360-1
    DOI: 10.1038/s41467-023-39360-1
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    References listed on IDEAS

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    1. Ming Wang & Chong Bi & Ling Li & Shibing Long & Qi Liu & Hangbing Lv & Nianduan Lu & Pengxiao Sun & Ming Liu, 2014. "Thermoelectric Seebeck effect in oxide-based resistive switching memory," Nature Communications, Nature, vol. 5(1), pages 1-6, December.
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