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Hopping transport through defect-induced localized states in molybdenum disulphide

Author

Listed:
  • Hao Qiu

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University)

  • Tao Xu

    (SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University)

  • Zilu Wang

    (Southeast University)

  • Wei Ren

    (Shanghai University, 99 Shangda Road)

  • Haiyan Nan

    (Southeast University)

  • Zhenhua Ni

    (Southeast University)

  • Qian Chen

    (Southeast University)

  • Shijun Yuan

    (Southeast University)

  • Feng Miao

    (School of Physics, Nanjing University)

  • Fengqi Song

    (School of Physics, Nanjing University)

  • Gen Long

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University)

  • Yi Shi

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University)

  • Litao Sun

    (SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University)

  • Jinlan Wang

    (Southeast University)

  • Xinran Wang

    (National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University)

Abstract

Molybdenum disulphide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report a study of transport in few-layer molybdenum disulphide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulphur vacancies exist in molybdenum disulphide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbour hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulphide.

Suggested Citation

  • Hao Qiu & Tao Xu & Zilu Wang & Wei Ren & Haiyan Nan & Zhenhua Ni & Qian Chen & Shijun Yuan & Feng Miao & Fengqi Song & Gen Long & Yi Shi & Litao Sun & Jinlan Wang & Xinran Wang, 2013. "Hopping transport through defect-induced localized states in molybdenum disulphide," Nature Communications, Nature, vol. 4(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3642
    DOI: 10.1038/ncomms3642
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    Cited by:

    1. Zhaojun Li & Hope Bretscher & Yunwei Zhang & Géraud Delport & James Xiao & Alpha Lee & Samuel D. Stranks & Akshay Rao, 2021. "Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
    2. Yanfei Zhao & Mukesh Tripathi & Kristiāns Čerņevičs & Ahmet Avsar & Hyun Goo Ji & Juan Francisco Gonzalez Marin & Cheol-Yeon Cheon & Zhenyu Wang & Oleg V. Yazyev & Andras Kis, 2023. "Electrical spectroscopy of defect states and their hybridization in monolayer MoS2," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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