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Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

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  • C. H. Yang

    (Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales)

  • A. Rossi

    (Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales)

  • R. Ruskov

    (Laboratory for Physical Sciences, 8050 Greenmead Drive)

  • N. S. Lai

    (Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales)

  • F. A. Mohiyaddin

    (Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales)

  • S. Lee

    (Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue University)

  • C. Tahan

    (Laboratory for Physical Sciences, 8050 Greenmead Drive)

  • G. Klimeck

    (Network for Computational Nanotechnology, Birck Nanotechnology Center, Purdue University)

  • A. Morello

    (Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales)

  • A. S. Dzurak

    (Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales)

Abstract

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure the formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal–oxide–semiconductor quantum dot, providing splittings spanning 0.3–0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin read-out and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 s. Spin relaxation occurs via phonon emission due to spin–orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide.

Suggested Citation

  • C. H. Yang & A. Rossi & R. Ruskov & N. S. Lai & F. A. Mohiyaddin & S. Lee & C. Tahan & G. Klimeck & A. Morello & A. S. Dzurak, 2013. "Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting," Nature Communications, Nature, vol. 4(1), pages 1-8, October.
  • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3069
    DOI: 10.1038/ncomms3069
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    Cited by:

    1. Jesús D. Cifuentes & Tuomo Tanttu & Will Gilbert & Jonathan Y. Huang & Ensar Vahapoglu & Ross C. C. Leon & Santiago Serrano & Dennis Otter & Daniel Dunmore & Philip Y. Mai & Frédéric Schlattner & Meng, 2024. "Bounds to electron spin qubit variability for scalable CMOS architectures," Nature Communications, Nature, vol. 15(1), pages 1-14, December.

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