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Avalanche breakdown in GaTa4Se8−xTex narrow-gap Mott insulators

Author

Listed:
  • V. Guiot

    (Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS)

  • L. Cario

    (Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS)

  • E. Janod

    (Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS)

  • B. Corraze

    (Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS)

  • V. Ta Phuoc

    (GREMAN, CNRS UMR 7347 Université F.Rabelais. UFR Sciences—Parc de Grandmont)

  • M. Rozenberg

    (Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud)

  • P. Stoliar

    (Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud)

  • T. Cren

    (Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588)

  • D. Roditchev

    (Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588)

Abstract

Mott transitions induced by strong electric fields are receiving growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators. However, experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow-gap Mott insulators GaTa4Se8−xTex. We find that the I–V characteristics and the magnitude of the threshold electric field (Eth) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. Eth increases as a power law of the Mott–Hubbard gap (Eg), in surprising agreement with the universal law Eth Eg2.5 reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude greater than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains that grow to form filamentary paths across the sample.

Suggested Citation

  • V. Guiot & L. Cario & E. Janod & B. Corraze & V. Ta Phuoc & M. Rozenberg & P. Stoliar & T. Cren & D. Roditchev, 2013. "Avalanche breakdown in GaTa4Se8−xTex narrow-gap Mott insulators," Nature Communications, Nature, vol. 4(1), pages 1-6, June.
    • Handle: RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms2735
    DOI: 10.1038/ncomms2735
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    Cited by:

    1. Alessandra Milloch & Ignacio Figueruelo-Campanero & Wei-Fan Hsu & Selene Mor & Simon Mellaerts & Francesco Maccherozzi & Larissa S. I. Veiga & Sarnjeet S. Dhesi & Mauro Spera & Jin Won Seo & Jean-Pier, 2024. "Mott resistive switching initiated by topological defects," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Jong E. Han & Camille Aron & Xi Chen & Ishiaka Mansaray & Jae-Ho Han & Ki-Seok Kim & Michael Randle & Jonathan P. Bird, 2023. "Correlated insulator collapse due to quantum avalanche via in-gap ladder states," Nature Communications, Nature, vol. 14(1), pages 1-8, December.

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