Author
Listed:
- Kazunori Kuribara
(The University of Tokyo
The University of Tokyo
Exploratory Research for Advanced Technology, Japan Science and Technology Agency)
- He Wang
(Princeton University)
- Naoya Uchiyama
(The University of Tokyo)
- Kenjiro Fukuda
(The University of Tokyo)
- Tomoyuki Yokota
(The University of Tokyo)
- Ute Zschieschang
(Max Planck Institute for Solid State Research, Heisenbergstrasse 1, Stuttgart 70569, Germany.)
- Cherno Jaye
(Material Measurement Laboratory, National Institute of Standards and Technology)
- Daniel Fischer
(Material Measurement Laboratory, National Institute of Standards and Technology)
- Hagen Klauk
(Max Planck Institute for Solid State Research, Heisenbergstrasse 1, Stuttgart 70569, Germany.)
- Tatsuya Yamamoto
(Faculty of Engineering, Hiroshima University)
- Kazuo Takimiya
(Faculty of Engineering, Hiroshima University)
- Masaaki Ikeda
(Nippon Kayaku Co., Ltd., Tokyo Fujimi Bldg., 1-11-2 Fujimi, Chiyoda-ku, Tokyo 102-8172, Japan.)
- Hirokazu Kuwabara
(Nippon Kayaku Co., Ltd., Tokyo Fujimi Bldg., 1-11-2 Fujimi, Chiyoda-ku, Tokyo 102-8172, Japan.)
- Tsuyoshi Sekitani
(The University of Tokyo
The University of Tokyo
Exploratory Research for Advanced Technology, Japan Science and Technology Agency)
- Yueh-Lin Loo
(Princeton University)
- Takao Someya
(The University of Tokyo
The University of Tokyo
Exploratory Research for Advanced Technology, Japan Science and Technology Agency
Princeton University)
Abstract
The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm2 V−1s−1 within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.
Suggested Citation
Kazunori Kuribara & He Wang & Naoya Uchiyama & Kenjiro Fukuda & Tomoyuki Yokota & Ute Zschieschang & Cherno Jaye & Daniel Fischer & Hagen Klauk & Tatsuya Yamamoto & Kazuo Takimiya & Masaaki Ikeda & Hi, 2012.
"Organic transistors with high thermal stability for medical applications,"
Nature Communications, Nature, vol. 3(1), pages 1-7, January.
Handle:
RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1721
DOI: 10.1038/ncomms1721
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Cited by:
- Peiliu Li & Xianfu Huang & Ya-Pu Zhao, 2023.
"Electro-capillary peeling of thin films,"
Nature Communications, Nature, vol. 14(1), pages 1-10, December.
- Chungryeol Lee & Changhyeon Lee & Seungmin Lee & Junhwan Choi & Hocheon Yoo & Sung Gap Im, 2023.
"A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors,"
Nature Communications, Nature, vol. 14(1), pages 1-11, December.
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