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Observation of the inverse spin Hall effect in silicon

Author

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  • Kazuya Ando

    (Institute for Materials Research, Tohoku University)

  • Eiji Saitoh

    (Institute for Materials Research, Tohoku University
    CREST, Japan Science and Technology Agency
    The Advanced Science Research Center, Japan Atomic Energy Agency)

Abstract

The spin–orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin–orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.

Suggested Citation

  • Kazuya Ando & Eiji Saitoh, 2012. "Observation of the inverse spin Hall effect in silicon," Nature Communications, Nature, vol. 3(1), pages 1-6, January.
    • Handle: RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1640
    DOI: 10.1038/ncomms1640
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    1. Ndeto, Martin Paul & Wekesa, David Wafula & Kinyua, Robert & Njoka, Francis, 2020. "Investigation into the effects of the earth’s magnetic field on the conversion efficiency of solar cells," Renewable Energy, Elsevier, vol. 159(C), pages 184-194.
    2. Hongjun Xu & Ke Jia & Yuan Huang & Fanqi Meng & Qinghua Zhang & Yu Zhang & Chen Cheng & Guibin Lan & Jing Dong & Jinwu Wei & Jiafeng Feng & Congli He & Zhe Yuan & Mingliang Zhu & Wenqing He & Caihua W, 2023. "Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic damping," Nature Communications, Nature, vol. 14(1), pages 1-10, December.

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