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High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

Author

Listed:
  • Jia-Mian Hu

    (and State Key Lab of New Ceramics and Fine Processing, Tsinghua University
    The Pennsylvania State University)

  • Zheng Li

    (and State Key Lab of New Ceramics and Fine Processing, Tsinghua University)

  • Long-Qing Chen

    (The Pennsylvania State University)

  • Ce-Wen Nan

    (and State Key Lab of New Ceramics and Fine Processing, Tsinghua University)

Abstract

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

Suggested Citation

  • Jia-Mian Hu & Zheng Li & Long-Qing Chen & Ce-Wen Nan, 2011. "High-density magnetoresistive random access memory operating at ultralow voltage at room temperature," Nature Communications, Nature, vol. 2(1), pages 1-8, September.
    • Handle: RePEc:nat:natcom:v:2:y:2011:i:1:d:10.1038_ncomms1564
    DOI: 10.1038/ncomms1564
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    Cited by:

    1. Deli Kong & András Kovács & Michalis Charilaou & Fengshan Zheng & Lihua Wang & Xiaodong Han & Rafal E. Dunin-Borkowski, 2023. "Direct observation of tensile-strain-induced nanoscale magnetic hardening," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    2. Ellen Fogh & Bastian Klemke & Manfred Reehuis & Philippe Bourges & Christof Niedermayer & Sonja Holm-Dahlin & Oksana Zaharko & Jürg Schefer & Andreas B. Kristensen & Michael K. Sørensen & Sebastian Pa, 2023. "Tuning magnetoelectricity in a mixed-anisotropy antiferromagnet," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    3. Piyush Agarwal & Lisen Huang & Sze Lim & Ranjan Singh, 2022. "Electric-field control of nonlinear THz spintronic emitters," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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