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Direct observation of tensile-strain-induced nanoscale magnetic hardening

Author

Listed:
  • Deli Kong

    (Forschungszentrum Jülich
    Faculty of Science, Beijing University of Technology)

  • András Kovács

    (Forschungszentrum Jülich)

  • Michalis Charilaou

    (University of Louisiana at Lafayette)

  • Fengshan Zheng

    (Forschungszentrum Jülich
    South China University of Technology)

  • Lihua Wang

    (Beijing University of Technology)

  • Xiaodong Han

    (Beijing University of Technology)

  • Rafal E. Dunin-Borkowski

    (Forschungszentrum Jülich)

Abstract

Magnetoelasticity is the bond between magnetism and mechanics, but the intricate mechanisms via which magnetic states change due to mechanical strain remain poorly understood. Here, we provide direct nanoscale observations of how tensile strain modifies magnetic domains in a ferromagnetic Ni thin plate using in situ Fresnel defocus imaging, off-axis electron holography and a bimetallic deformation device. We present quantitative measurements of magnetic domain wall structure and its transformations as a function of strain. We observe the formation and dissociation of strain-induced periodic 180° magnetic domain walls perpendicular to the strain axis. The magnetization transformation exhibits stress-determined directional sensitivity and is reversible and tunable through the size of the nanostructure. In this work, we provide direct evidence for expressive and deterministic magnetic hardening in ferromagnetic nanostructures, while our experimental approach allows quantifiable local measurements of strain-induced changes in the magnetic states of nanomaterials.

Suggested Citation

  • Deli Kong & András Kovács & Michalis Charilaou & Fengshan Zheng & Lihua Wang & Xiaodong Han & Rafal E. Dunin-Borkowski, 2023. "Direct observation of tensile-strain-induced nanoscale magnetic hardening," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39650-8
    DOI: 10.1038/s41467-023-39650-8
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    References listed on IDEAS

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    1. Jia-Mian Hu & Zheng Li & Long-Qing Chen & Ce-Wen Nan, 2011. "High-density magnetoresistive random access memory operating at ultralow voltage at room temperature," Nature Communications, Nature, vol. 2(1), pages 1-8, September.
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