Author
Listed:
- S. Lupi
(Universitá di Roma 'La Sapienza', Piazzale A. Moro 2)
- L. Baldassarre
(Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Basovizza)
- B. Mansart
(Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud)
- A. Perucchi
(Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Basovizza)
- A. Barinov
(Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Basovizza)
- P. Dudin
(Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Basovizza)
- E. Papalazarou
(Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud)
- F. Rodolakis
(Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud
Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex, France.)
- J. -P. Rueff
(Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex, France.)
- J. -P. Itié
(Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex, France.)
- S. Ravy
(Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex, France.)
- D. Nicoletti
(Universitá di Roma 'La Sapienza', Piazzale A. Moro 2)
- P. Postorino
(Universitá di Roma 'La Sapienza', Piazzale A. Moro 2)
- P. Hansmann
(Institute of Solid State Physics, Vienna University of Technology)
- N. Parragh
(Institute of Solid State Physics, Vienna University of Technology)
- A. Toschi
(Institute of Solid State Physics, Vienna University of Technology)
- T. Saha-Dasgupta
(S.N. Bose Center for Basic Sciences, Salt Lake)
- O. K. Andersen
(Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1)
- G. Sangiovanni
(Institute of Solid State Physics, Vienna University of Technology)
- K. Held
(Institute of Solid State Physics, Vienna University of Technology)
- M. Marsi
(Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud)
Abstract
V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal-to-insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator. This or related MITs have a high technological potential, among others, for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure, that promotes a genuine Mott transition to an eventually homogeneous metallic state.
Suggested Citation
S. Lupi & L. Baldassarre & B. Mansart & A. Perucchi & A. Barinov & P. Dudin & E. Papalazarou & F. Rodolakis & J. -P. Rueff & J. -P. Itié & S. Ravy & D. Nicoletti & P. Postorino & P. Hansmann & N. Parr, 2010.
"A microscopic view on the Mott transition in chromium-doped V2O3,"
Nature Communications, Nature, vol. 1(1), pages 1-7, December.
Handle:
RePEc:nat:natcom:v:1:y:2010:i:1:d:10.1038_ncomms1109
DOI: 10.1038/ncomms1109
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