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Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Author

Listed:
  • Maik Simon

    (NaMLab gGmbH)

  • Halid Mulaosmanovic

    (NaMLab gGmbH
    GlobalFoundries Fab 1 LLC & Co. KG)

  • Violetta Sessi

    (GlobalFoundries Fab 1 LLC & Co. KG)

  • Maximilian Drescher

    (GlobalFoundries Fab 1 LLC & Co. KG)

  • Niladri Bhattacharjee

    (NaMLab gGmbH)

  • Stefan Slesazeck

    (NaMLab gGmbH)

  • Maciej Wiatr

    (GlobalFoundries Fab 1 LLC & Co. KG)

  • Thomas Mikolajick

    (NaMLab gGmbH
    TU Dresden, Chair for Nanoelectronics)

  • Jens Trommer

    (NaMLab gGmbH)

Abstract

Reconfigurable field effect transistors are an emerging class of electronic devices, which exploit a structure with multiple independent gates to selectively adjust the charge carrier transport. Here, we propose a new device variant, where not only p-type and n-type operation modes, but also an ambipolar mode can be selected solely by adjusting a single program voltage. It is demonstrated how the unique device reconfigurability of the new variant can be exploited for analog circuit design. The non-linearity of the ambipolar mode can be used for frequency doubling without the generation of additional harmonics. Further, phase shifter and follower circuits are enabled by the n- and p-type modes, respectively. All three functions can be combined to create a 3-to-1 reconfigurable analog signal modulation circuit on a single device enabling wireless communication schemes. Both, the concept as well as the application have been experimentally demonstrated on industrial-scale fully-depleted SOI platform. The special transport physics in those structures has been analyzed by TCAD simulations as well as temperature dependent measurements.

Suggested Citation

  • Maik Simon & Halid Mulaosmanovic & Violetta Sessi & Maximilian Drescher & Niladri Bhattacharjee & Stefan Slesazeck & Maciej Wiatr & Thomas Mikolajick & Jens Trommer, 2022. "Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34533-w
    DOI: 10.1038/s41467-022-34533-w
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    References listed on IDEAS

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    1. Seunghyun Lee & Kyunghoon Lee & Chang-Hua Liu & Girish S. Kulkarni & Zhaohui Zhong, 2012. "Flexible and transparent all-graphene circuits for quaternary digital modulations," Nature Communications, Nature, vol. 3(1), pages 1-7, January.
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    Cited by:

    1. Zhongyunshen Zhu & Anton E. O. Persson & Lars-Erik Wernersson, 2023. "Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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