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Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser

Author

Listed:
  • Jianglin Yue

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Kenji Tanaka

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Go Hirano

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Gen Yonezawa

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Misaki Shimizu

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Yasunobu Iwakoshi

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Hiroshi Tobita

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Rintaro Koda

    (Tokyo Laboratory 06, R&D Center, Sony Group Corporation)

  • Yasutaka Higa

    (Tokyo Laboratory 06, R&D Center, Sony Group Corporation)

  • Hideki Watanabe

    (Tokyo Laboratory 06, R&D Center, Sony Group Corporation)

  • Katsunori Yanashima

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

  • Masanao Kamata

    (Tokyo Laboratory 04, R&D Center, Sony Group Corporation)

Abstract

Compact lasers capable of producing kilowatt class peak power are highly desirable for applications in various fields, including laser remote sensing, laser micromachining, and biomedical photonics. In this paper, we propose a high-peak-power chip-scale semiconductor/solid-state vertically integrated laser in which two cavities are optically coupled at the solid-state laser gain medium. The first cavity is for the intra-pumping of ytterbium-doped yttrium aluminum garnet (Yb:YAG) with an electrically driven indium gallium arsenide (InGaAs) quantum well, and the second cavity consists of Yb:YAG and chromium-doped yttrium aluminum garnet (Cr:YAG) for passive Q-switching. The proposed laser produces pulses as short as 450 ps, and an estimated peak power of 57.0 kW with a laser chip dimension of 1 mm3. To the best of our knowledge, this is the first monolithic integration of semiconductor and solid-state laser gain mediums to realize a compact high-peak-power laser.

Suggested Citation

  • Jianglin Yue & Kenji Tanaka & Go Hirano & Gen Yonezawa & Misaki Shimizu & Yasunobu Iwakoshi & Hiroshi Tobita & Rintaro Koda & Yasutaka Higa & Hideki Watanabe & Katsunori Yanashima & Masanao Kamata, 2022. "Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-33528-x
    DOI: 10.1038/s41467-022-33528-x
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    References listed on IDEAS

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    1. Ke Ding & Xin Huang & Aijun Ding & Minghuai Wang & Hang Su & Veli-Matti Kerminen & Tuukka Petäjä & Zhemin Tan & Zilin Wang & Derong Zhou & Jianning Sun & Hong Liao & Huijun Wang & Ken Carslaw & Robert, 2021. "Aerosol-boundary-layer-monsoon interactions amplify semi-direct effect of biomass smoke on low cloud formation in Southeast Asia," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
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