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2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Author

Listed:
  • Hitesh Agarwal

    (ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology)

  • Bernat Terrés

    (ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology)

  • Lorenzo Orsini

    (ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology
    Università di Pisa)

  • Alberto Montanaro

    (Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory)

  • Vito Sorianello

    (Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory)

  • Marianna Pantouvaki

    (Department of 3D and Silicon photonics systems, Imec)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Dries Van Thourhout

    (Ghent University-IMEC)

  • Marco Romagnoli

    (Consorzio Nazionale per le Telecomunicazioni (CNIT), Photonic Networks and Technologies National Laboratory)

  • Frank H. L. Koppens

    (ICFO—Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology
    ICREA—Institució Catalana de Recerca i Estudis Avançats)

Abstract

Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

Suggested Citation

  • Hitesh Agarwal & Bernat Terrés & Lorenzo Orsini & Alberto Montanaro & Vito Sorianello & Marianna Pantouvaki & Kenji Watanabe & Takashi Taniguchi & Dries Van Thourhout & Marco Romagnoli & Frank H. L. K, 2021. "2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators," Nature Communications, Nature, vol. 12(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-20926-w
    DOI: 10.1038/s41467-021-20926-w
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    Cited by:

    1. Qinci Wu & Jun Qian & Yuechen Wang & Luwen Xing & Ziyi Wei & Xin Gao & Yurui Li & Zhongfan Liu & Hongtao Liu & Haowen Shu & Jianbo Yin & Xingjun Wang & Hailin Peng, 2024. "Waveguide-integrated twisted bilayer graphene photodetectors," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Josef Schätz & Navin Nayi & Jonas Weber & Christoph Metzke & Sebastian Lukas & Jürgen Walter & Tim Schaffus & Fabian Streb & Eros Reato & Agata Piacentini & Annika Grundmann & Holger Kalisch & Michael, 2024. "Button shear testing for adhesion measurements of 2D materials," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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