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Chemical trends of deep levels in van der Waals semiconductors

Author

Listed:
  • Penghong Ci

    (University of California
    Lawrence Berkeley National Laboratory)

  • Xuezeng Tian

    (University of California)

  • Jun Kang

    (Beijing Computational Science Research Center)

  • Anthony Salazar

    (University of California)

  • Kazutaka Eriguchi

    (University of California)

  • Sorren Warkander

    (University of California)

  • Kechao Tang

    (University of California)

  • Jiaman Liu

    (University of California)

  • Yabin Chen

    (University of California
    Beijing Institute of Technology)

  • Sefaattin Tongay

    (Transport, and Energy, Arizona State University)

  • Wladek Walukiewicz

    (Lawrence Berkeley National Laboratory)

  • Jianwei Miao

    (University of California)

  • Oscar Dubon

    (University of California
    Lawrence Berkeley National Laboratory)

  • Junqiao Wu

    (University of California
    Lawrence Berkeley National Laboratory)

Abstract

Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K.

Suggested Citation

  • Penghong Ci & Xuezeng Tian & Jun Kang & Anthony Salazar & Kazutaka Eriguchi & Sorren Warkander & Kechao Tang & Jiaman Liu & Yabin Chen & Sefaattin Tongay & Wladek Walukiewicz & Jianwei Miao & Oscar Du, 2020. "Chemical trends of deep levels in van der Waals semiconductors," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-19247-1
    DOI: 10.1038/s41467-020-19247-1
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    Cited by:

    1. Yanfei Zhao & Mukesh Tripathi & Kristiāns Čerņevičs & Ahmet Avsar & Hyun Goo Ji & Juan Francisco Gonzalez Marin & Cheol-Yeon Cheon & Zhenyu Wang & Oleg V. Yazyev & Andras Kis, 2023. "Electrical spectroscopy of defect states and their hybridization in monolayer MoS2," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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