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Non-thermal resistive switching in Mott insulator nanowires

Author

Listed:
  • Yoav Kalcheim

    (University of California-San Diego)

  • Alberto Camjayi

    (Ciudad Universitaria)

  • Javier Valle

    (University of California-San Diego)

  • Pavel Salev

    (University of California-San Diego)

  • Marcelo Rozenberg

    (Laboratoire de Physique des Solides)

  • Ivan K. Schuller

    (University of California-San Diego)

Abstract

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

Suggested Citation

  • Yoav Kalcheim & Alberto Camjayi & Javier Valle & Pavel Salev & Marcelo Rozenberg & Ivan K. Schuller, 2020. "Non-thermal resistive switching in Mott insulator nanowires," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16752-1
    DOI: 10.1038/s41467-020-16752-1
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    Cited by:

    1. Andrea Ronchi & Paolo Franceschini & Andrea Poli & Pía Homm & Ann Fitzpatrick & Francesco Maccherozzi & Gabriele Ferrini & Francesco Banfi & Sarnjeet S. Dhesi & Mariela Menghini & Michele Fabrizio & J, 2022. "Nanoscale self-organization and metastable non-thermal metallicity in Mott insulators," Nature Communications, Nature, vol. 13(1), pages 1-14, December.
    2. Alessandra Milloch & Ignacio Figueruelo-Campanero & Wei-Fan Hsu & Selene Mor & Simon Mellaerts & Francesco Maccherozzi & Larissa S. I. Veiga & Sarnjeet S. Dhesi & Mauro Spera & Jin Won Seo & Jean-Pier, 2024. "Mott resistive switching initiated by topological defects," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    3. Dohyun Kim & Eui-Cheol Shin & Yongjoon Lee & Young Hee Lee & Mali Zhao & Yong-Hyun Kim & Heejun Yang, 2022. "Atomic-scale thermopower in charge density wave states," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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