Author
Listed:
- Alexandra F. Paterson
(King Abdullah University of Science and Technology (KAUST))
- Achilleas Savva
(King Abdullah University of Science and Technology (KAUST))
- Shofarul Wustoni
(King Abdullah University of Science and Technology (KAUST))
- Leonidas Tsetseris
(National Technical University of Athens)
- Bryan D. Paulsen
(Northwestern University)
- Hendrik Faber
(King Abdullah University of Science and Technology (KAUST) Solar Center (KSC), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST))
- Abdul Hamid Emwas
(Core Labs, King Abdullah University of Science and Technology (KAUST))
- Xingxing Chen
(King Abdullah University of Science and Technology (KAUST) Solar Center (KSC), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST))
- Georgios Nikiforidis
(King Abdullah University of Science and Technology (KAUST))
- Tania C. Hidalgo
(King Abdullah University of Science and Technology (KAUST))
- Maximillian Moser
(Imperial College London South Kensington)
- Iuliana Petruta Maria
(Imperial College London South Kensington)
- Jonathan Rivnay
(Northwestern University)
- Iain McCulloch
(King Abdullah University of Science and Technology (KAUST) Solar Center (KSC), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST)
Imperial College London South Kensington)
- Thomas D. Anthopoulos
(King Abdullah University of Science and Technology (KAUST) Solar Center (KSC), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST))
- Sahika Inal
(King Abdullah University of Science and Technology (KAUST))
Abstract
From established to emergent technologies, doping plays a crucial role in all semiconducting devices. Doping could, theoretically, be an excellent technique for improving repressively low transconductances in n-type organic electrochemical transistors – critical for advancing logic circuits for bioelectronic and neuromorphic technologies. However, the technical challenge is extreme: n-doped polymers are unstable in electrochemical transistor operating environments, air and water (electrolyte). Here, the first demonstration of doping in electron transporting organic electrochemical transistors is reported. The ammonium salt tetra-n-butylammonium fluoride is simply admixed with the conjugated polymer poly(N,N’-bis(7-glycol)-naphthalene-1,4,5,8-bis(dicarboximide)-co-2,2’-bithiophene-co-N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide), and found to act as a simultaneous molecular dopant and morphology-additive. The combined effects enhance the n-type transconductance with improved channel capacitance and mobility. Furthermore, operational and shelf-life stability measurements showcase the first example of water-stable n-doping in a polymer. Overall, the results set a precedent for doping/additives to impact organic electrochemical transistors as powerfully as they have in other semiconducting devices.
Suggested Citation
Alexandra F. Paterson & Achilleas Savva & Shofarul Wustoni & Leonidas Tsetseris & Bryan D. Paulsen & Hendrik Faber & Abdul Hamid Emwas & Xingxing Chen & Georgios Nikiforidis & Tania C. Hidalgo & Maxim, 2020.
"Water stable molecular n-doping produces organic electrochemical transistors with high transconductance and record stability,"
Nature Communications, Nature, vol. 11(1), pages 1-11, December.
Handle:
RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16648-0
DOI: 10.1038/s41467-020-16648-0
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