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Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene

Author

Listed:
  • Stiven Forti

    (Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia
    Max-Planck-Institut für Festkörperforschung)

  • Stefan Link

    (Max-Planck-Institut für Festkörperforschung)

  • Alexander Stöhr

    (Max-Planck-Institut für Festkörperforschung)

  • Yuran Niu

    (Lund University)

  • Alexei A. Zakharov

    (Lund University)

  • Camilla Coletti

    (Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia
    Graphene Labs, Istituto Italiano di Tecnologia)

  • Ulrich Starke

    (Max-Planck-Institut für Festkörperforschung)

Abstract

The synthesis of two-dimensional (2D) transition metals has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the $$\overline {{\mathrm{\Gamma }}{\mathrm{K}}}$$ΓK¯ direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which has not yet been observed and hosts great interest for fundamental physics.

Suggested Citation

  • Stiven Forti & Stefan Link & Alexander Stöhr & Yuran Niu & Alexei A. Zakharov & Camilla Coletti & Ulrich Starke, 2020. "Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-15683-1
    DOI: 10.1038/s41467-020-15683-1
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    Cited by:

    1. Cedric Schmitt & Jonas Erhardt & Philipp Eck & Matthias Schmitt & Kyungchan Lee & Philipp Keßler & Tim Wagner & Merit Spring & Bing Liu & Stefan Enzner & Martin Kamp & Vedran Jovic & Chris Jozwiak & A, 2024. "Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Hongguang Wang & Jiawei Zhang & Chen Shen & Chao Yang & Kathrin Küster & Julia Deuschle & Ulrich Starke & Hongbin Zhang & Masahiko Isobe & Dennis Huang & Peter A. van Aken & Hidenori Takagi, 2024. "Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+xSe2 films," Nature Communications, Nature, vol. 15(1), pages 1-11, December.

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