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High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Author

Listed:
  • Feng Wu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences, Chinese Academy of Sciences)

  • Qing Li

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences, Chinese Academy of Sciences)

  • Peng Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences, Chinese Academy of Sciences)

  • Hui Xia

    (Chinese Academy of Sciences)

  • Zhen Wang

    (Chinese Academy of Sciences)

  • Yang Wang

    (Chinese Academy of Sciences)

  • Man Luo

    (Chinese Academy of Sciences)

  • Long Chen

    (Chinese Academy of Sciences)

  • Fansheng Chen

    (Chinese Academy of Sciences)

  • Jinshui Miao

    (Chinese Academy of Sciences
    University of Pennsylvania)

  • Xiaoshuang Chen

    (Chinese Academy of Sciences)

  • Wei Lu

    (Chinese Academy of Sciences)

  • Chongxin Shan

    (Zhengzhou University)

  • Anlian Pan

    (Hunan University)

  • Xing Wu

    (East China Normal University)

  • Wencai Ren

    (Chinese Academy of Sciences)

  • Deep Jariwala

    (University of Pennsylvania)

  • Weida Hu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences, Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

Abstract

Van der Waals (vdW) heterodiodes based on two-dimensional (2D) materials have shown tremendous potential in photovoltaic detectors and solar cells. However, such 2D photovoltaic devices are limited by low quantum efficiencies due to the severe interface recombination and the inefficient contacts. Here, we report an efficient MoS2/AsP vdW hetero-photodiode utilizing a unilateral depletion region band design and a narrow bandgap AsP as an effective carrier selective contact. The unilateral depletion region is verified via both the Fermi level and the infrared response measurements. The device demonstrates a pronounced photovoltaic behavior with a short-circuit current of 1.3 μA and a large open-circuit voltage of 0.61 V under visible light illumination. Especially, a high external quantum efficiency of 71%, a record high power conversion efficiency of 9% and a fast response time of 9 μs are achieved. Our work suggests an effective scheme to design high-performance photovoltaic devices assembled by 2D materials.

Suggested Citation

  • Feng Wu & Qing Li & Peng Wang & Hui Xia & Zhen Wang & Yang Wang & Man Luo & Long Chen & Fansheng Chen & Jinshui Miao & Xiaoshuang Chen & Wei Lu & Chongxin Shan & Anlian Pan & Xing Wu & Wencai Ren & De, 2019. "High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-12707-3
    DOI: 10.1038/s41467-019-12707-3
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    Cited by:

    1. Thanh Luan Phan & Sohyeon Seo & Yunhee Cho & Quoc An Vu & Young Hee Lee & Dinh Loc Duong & Hyoyoung Lee & Woo Jong Yu, 2022. "CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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