Author
Listed:
- Jonathan M. Goodwill
(Carnegie Mellon University
National Institute of Standards and Technology)
- Georg Ramer
(National Institute of Standards and Technology)
- Dasheng Li
(Carnegie Mellon University
National Institute of Standards and Technology)
- Brian D. Hoskins
(National Institute of Standards and Technology)
- Georges Pavlidis
(National Institute of Standards and Technology)
- Jabez J. McClelland
(National Institute of Standards and Technology)
- Andrea Centrone
(National Institute of Standards and Technology)
- James A. Bain
(Carnegie Mellon University)
- Marek Skowronski
(Carnegie Mellon University)
Abstract
Threshold switching devices are of increasing importance for a number of applications including solid-state memories and neuromorphic circuits. Their non-linear characteristics are thought to be associated with a spontaneous (occurring without an apparent external stimulus) current flow constriction but the extent and the underlying mechanism are a subject of debate. Here we use Scanning Joule Expansion Microscopy to demonstrate that, in functional layers with thermally activated electrical conductivity, the current spontaneously and gradually constricts when a device is biased into the negative differential resistance region. We also show that the S-type negative differential resistance I–V characteristics are only a subset of possible solutions and it is possible to have multiple current density distributions corresponding to the same value of the device voltage. In materials with steep dependence of current on temperature the current constriction can occur in nanoscale devices, making this effect relevant for computing applications.
Suggested Citation
Jonathan M. Goodwill & Georg Ramer & Dasheng Li & Brian D. Hoskins & Georges Pavlidis & Jabez J. McClelland & Andrea Centrone & James A. Bain & Marek Skowronski, 2019.
"Spontaneous current constriction in threshold switching devices,"
Nature Communications, Nature, vol. 10(1), pages 1-8, December.
Handle:
RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-09679-9
DOI: 10.1038/s41467-019-09679-9
Download full text from publisher
Citations
Citations are extracted by the
CitEc Project, subscribe to its
RSS feed for this item.
Cited by:
- Ying, Jiajie & Liang, Yan & Wang, Junlan & Dong, Yujiao & Wang, Guangyi & Gu, Meiyuan, 2021.
"A tristable locally-active memristor and its complex dynamics,"
Chaos, Solitons & Fractals, Elsevier, vol. 148(C).
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-09679-9. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.