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Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers

Author

Listed:
  • Hengli Duan

    (University of Science and Technology of China)

  • Peng Guo

    (University of Science and Technology of China)

  • Chao Wang

    (Chinese Academy of Sciences)

  • Hao Tan

    (University of Science and Technology of China)

  • Wei Hu

    (University of Science and Technology of China)

  • Wensheng Yan

    (University of Science and Technology of China)

  • Chao Ma

    (Hunan University)

  • Liang Cai

    (University of Science and Technology of China)

  • Li Song

    (University of Science and Technology of China)

  • Wenhua Zhang

    (University of Science and Technology of China)

  • Zhihu Sun

    (University of Science and Technology of China)

  • Linjun Wang

    (University of Science and Technology of China)

  • Wenbo Zhao

    (University of Science and Technology of China)

  • Yuewei Yin

    (University of Science and Technology of China)

  • Xiaoguang Li

    (University of Science and Technology of China)

  • Shiqiang Wei

    (University of Science and Technology of China)

Abstract

Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS2, where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS2 monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.

Suggested Citation

  • Hengli Duan & Peng Guo & Chao Wang & Hao Tan & Wei Hu & Wensheng Yan & Chao Ma & Liang Cai & Li Song & Wenhua Zhang & Zhihu Sun & Linjun Wang & Wenbo Zhao & Yuewei Yin & Xiaoguang Li & Shiqiang Wei, 2019. "Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers," Nature Communications, Nature, vol. 10(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-09531-0
    DOI: 10.1038/s41467-019-09531-0
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    Cited by:

    1. Yigang Jin & Yuhui Fang & Ze Li & Xiang Hao & Feng He & Bo Guan & Dongwei Wang & Sha Wu & Yang Li & Caiming Liu & Xiaojuan Dai & Ye Zou & Yimeng Sun & Wei Xu, 2022. "Construction of conducting bimetallic organic metal chalcogenides via selective metal metathesis and oxidation transformation," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    2. Bong Gyu Shin & Ji-Hoon Park & Jz-Yuan Juo & Jing Kong & Soon Jung Jung, 2023. "Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors," Nature Communications, Nature, vol. 14(1), pages 1-12, December.

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