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Wet Chemical Oxidation to Improve Interfacial Properties of Al 2 O 3 /Si and Interface Analysis of Al 2 O 3 /SiO x /Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement

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  • Kwan Hong Min

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
    Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Sungjin Choi

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
    Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea)

  • Myeong Sang Jeong

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
    Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Sungeun Park

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • Min Gu Kang

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • Jeong In Lee

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

  • Yoonmook Kang

    (Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea)

  • Donghwan Kim

    (Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea)

  • Hae-Seok Lee

    (Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea)

  • Hee-eun Song

    (Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea)

Abstract

A thin silicon oxide (SiO x ) layer (thickness: 1.5–2.0 nm) formed at an Al 2 O 3 /Si interface can enhance the interface properties. However, it is challenging to control the characteristics of thin SiO x layers because SiO x forms naturally during Al 2 O 3 deposition on Si substrates. In this study, a ~1.5 nm-thick SiO x layer was inserted between Al 2 O 3 and Si substrates by wet chemical oxidation to improve the passivation properties. The acidic solutions used for wet chemical oxidation were HCl:H 2 O 2 :H 2 O, H 2 SO 4 :H 2 O 2 :H 2 O, and HNO 3 . The thicknesses of SiO x layers formed in the acidic solutions were ~1.48, ~1.32, and ~1.50 nm for SiO x-HCl , SiO x-H2SO4 , and SiO x-HNO3 , respectively. The leakage current characteristics of SiO x-HNO3 were better than those of the oxide layers formed in the other acidic solutions. After depositing a ~10 nm-thick Al 2 O 3 on an SiO x-acidic /Si structure, we measured the effective carrier lifetime using quasi steady-state photoconductance and examined the interfacial properties of Al 2 O 3 /SiO x-acidic /Si using surface carrier lifetime simulation and capacitance–voltage measurement. The effective carrier lifetime of Al 2 O 3 /SiO x-HNO3 /Si was relatively high (~400 μs), resulting from the low surface defect density (2.35–2.88 × 10 10 cm −2 eV −1 ). The oxide layer inserted between Al 2 O 3 and Si substrates by wet chemical oxidation helped improve the Al 2 O 3 /Si interface properties.

Suggested Citation

  • Kwan Hong Min & Sungjin Choi & Myeong Sang Jeong & Sungeun Park & Min Gu Kang & Jeong In Lee & Yoonmook Kang & Donghwan Kim & Hae-Seok Lee & Hee-eun Song, 2020. "Wet Chemical Oxidation to Improve Interfacial Properties of Al 2 O 3 /Si and Interface Analysis of Al 2 O 3 /SiO x /Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measu," Energies, MDPI, vol. 13(7), pages 1-10, April.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:7:p:1803-:d:342988
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    References listed on IDEAS

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    1. Shude Zhang & Yue Yao & Dangping Hu & Weifei Lian & Hongqiang Qian & Jiansheng Jie & Qingzhu Wei & Zhichun Ni & Xiaohong Zhang & Lingzhi Xie, 2019. "Application of Silicon Oxide on High Efficiency Monocrystalline Silicon PERC Solar Cells," Energies, MDPI, vol. 12(6), pages 1-11, March.
    2. Yu-Tsu Lee & Fang-Ru Lin & Ting-Chun Lin & Chien-Hsun Chen & Zingway Pei, 2016. "Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells," Energies, MDPI, vol. 9(6), pages 1-10, May.
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