IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v13y2020i18p4650-d410193.html
   My bibliography  Save this article

Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells

Author

Listed:
  • Yu-Tsu Lee

    (Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan)

  • Fang-Ru Lin

    (Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan)

  • Zingway Pei

    (Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
    Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan
    Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 40227, Taiwan)

Abstract

In this work, we demonstrated a heterojunction Si solar cell utilizing chemically grown titanium oxide (TiO x ) as an electron-selective contact layer at its rear surface. With TiO x , the rear surface was passivated to reduce carrier recombination. The reverse saturation current, which is an indicator of carrier recombination, exhibited a 4.4-fold reduction after placing a TiO x layer on the rear surface. With reduced recombination, the open-circuit voltage increased from 433 mV to 600 mV and consequently, the power conversion efficiency (PCE) increased from 9.57 to 14.70%. By X-ray photoemission spectroscopy, the surface passivation was attributed to a silicon oxide interfacial layer formed during the chemical growth process. This passivation results in a 625 cm/s surface recombination velocity for the TiO x -passivated Si surface, which is 2.4 times lower than the sample without TiO x , ensuring the carriers pass through the rear contact without extensive recombination. According to these results, the band alignment for the heterojunction solar cell with and without a TiO x rear contact layer was plotted, the reduced interfacial recombination and the electron and hole blocking structure are the main reasons for the observed efficiency enhancement.

Suggested Citation

  • Yu-Tsu Lee & Fang-Ru Lin & Zingway Pei, 2020. "Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells," Energies, MDPI, vol. 13(18), pages 1-9, September.
    • Handle: RePEc:gam:jeners:v:13:y:2020:i:18:p:4650-:d:410193
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/13/18/4650/pdf
    Download Restriction: no
    File URL: https://www.mdpi.com/1996-1073/13/18/4650/
    Download Restriction: no
    ---><---

    References listed on IDEAS

    as
    1. Yu-Tsu Lee & Fang-Ru Lin & Ting-Chun Lin & Chien-Hsun Chen & Zingway Pei, 2016. "Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells," Energies, MDPI, vol. 9(6), pages 1-10, May.
    2. Changhyun Lee & Soohyun Bae & HyunJung Park & Dongjin Choi & Hoyoung Song & Hyunju Lee & Yoshio Ohshita & Donghwan Kim & Yoonmook Kang & Hae-Seok Lee, 2020. "Properties of Thermally Evaporated Titanium Dioxide as an Electron-Selective Contact for Silicon Solar Cells," Energies, MDPI, vol. 13(3), pages 1-10, February.
    Full references (including those not matched with items on IDEAS)

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Hoyoung Song & Changhyun Lee & Jiyeon Hyun & Sang-Won Lee & Dongjin Choi & Dowon Pyun & Jiyeon Nam & Seok-Hyun Jeong & Jiryang Kim & Soohyun Bae & Hyunju Lee & Yoonmook Kang & Donghwan Kim & Hae-Seok , 2021. "Monolithic Perovskite-Carrier Selective Contact Silicon Tandem Solar Cells Using Molybdenum Oxide as a Hole Selective Layer," Energies, MDPI, vol. 14(11), pages 1-9, May.
    2. Kwan Hong Min & Sungjin Choi & Myeong Sang Jeong & Sungeun Park & Min Gu Kang & Jeong In Lee & Yoonmook Kang & Donghwan Kim & Hae-Seok Lee & Hee-eun Song, 2020. "Wet Chemical Oxidation to Improve Interfacial Properties of Al 2 O 3 /Si and Interface Analysis of Al 2 O 3 /SiO x /Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measu," Energies, MDPI, vol. 13(7), pages 1-10, April.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:13:y:2020:i:18:p:4650-:d:410193. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.